SUP90N06-6m0P Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) Q (Typ.) DS DS(on) D g 175 C Junction Temperature d 60 0.006 at V = 10 V 78.5 RoHS GS 90 100 % R and UIS Tested COMPLIANT g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Secondary Synchronous Rectification T O-220AB Industrial D G GD S S T op V i e w Ordering Information: SUP90N06-6m0P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit Drain-Source Voltage V 60 DS V V Gate-Source Voltage 20 GS d T = 25 C C 90 Continuous Drain Current (T = 175 C) I J D d T = 70 C C 90 A Pulsed Drain Current I 240 DM I Avalanche Current 50 AS a L = 0.1 mH E 125 mJ Single Avalanche Energy AS b T = 25 C C 272 a P W Maximum Power Dissipation D c T = 25 C 3.75 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R Junction-to-Ambient (PCB Mount) 40 thJA C/W R Junction-to-Case (Drain) 0.55 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1 square PCB (FR-4 material). d. Package limited. Document Number: 69536 www.vishay.com S09-0703-Rev. B, 27-Apr-09 1SUP90N06-6m0P Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 60 DS DS D V V V = V , I = 250 A Gate Threshold Voltage 2.5 4.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 250 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS I V = 60 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 60 V, V = 0 V, T = 150 C 250 DS GS J a I V 10 V, V = 10 V 70 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.005 0.006 GS D a R Drain-Source On-State Resistance DS(on) V = 10 V, I = 20 A, T = 125 C 0.008 0.010 GS D J a g V = 15 V, I = 20 A 58 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4700 iss Output Capacitance C V = 0 V, V = 30 V, f = 1 MHz 620 pF oss GS DS C Reverse Transfer Capacitance 250 rss c Q 78.5 120 Total Gate Charge g c Q V = 30 V, V = 10 V, I = 50 A Gate-Source Charge 28 nC gs DS GS D c Q 20.6 Gate-Drain Charge gd R Gate Resistance f = 1 MHz 1.2 2.4 g c t 16 30 Turn-On Delay Time d(on) c t Rise Time V = 30 V, R = 0.6 10 20 r DD L ns c I 50 A, V = 10 V, R = 1 t D GEN g 25 40 Turn-Off Delay Time d(off) c t Fall Time 815 f b Source-Drain Diode Ratings and Characteristics T = 25 C C Continuous Current I 85 S A I Pulsed Current 240 SM a V I = 20 A, V = 0 V 0.83 1.5 V Forward Voltage SD F GS t Reverse Recovery Time 62 100 ns rr I I = 75 A, dI/dt = 100 A/s Peak Reverse Recovery Current 3.8 5.7 A RM(REC) F Q Reverse Recovery Charge 118 180 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69536 2 S09-0703-Rev. B, 27-Apr-09