Advance Technical Information TM PolarHV HiPerFET V = 500V FMM22-05PF DSS N-Channel Power MOSFET I = 13A D25 Phase Leg Topology R 270m 33 DS(on) T1 t 200ns 5 5 rr(max) 4 4 T2 TM ISOPLUS i4-Pak 11 2 2 Symbol Test Conditions Maximum Ratings T -55 ... +150 C J T 150 C 1 JM T -55 ... +150 C Isolated Tab stg V 50/60H , RMS, t = 1min, leads-to-tab 2500 ~V ISOLD Z 5 T 1.6mm (0.062 in.) from case for 10s 300 C L T Plastic body for 10s 260 C SOLD Features F Mounting force 20..120 / 4.5..27 N/lb. C z Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package Symbol Test Conditions Maximum Ratings - Isolated mounting surface - 2500V electrical isolation V T = 25C to 150C 500 V DSS J z Avalanche rated V T = 25C to 150C, R = 1M 500 V z DGR J GS Low Q G z Low Drain-to-Tab capacitance V Continuous 30 V GSS z V Transient 40 V Low package inductance GSM I T = 25C 13 A D25 C Advantages I T = 25C, pulse width limited by T 55 A DM C JM z Low gate drive requirement I T = 25C 22 A z A C High power density z E T = 25C 750 mJ AS C Fast intrinsic rectifier z Low drain to ground capacitance dV/dt I I , V V ,T 150C 10 V/ns S DM DD DSS J z Fast switching P T = 25C 132 W D C Applications z DC and AC motor drives z UPS, solar and wind power inverters Symbol Test Conditions Characteristic Values z Min. Typ. Max. Synchronous rectifiers z Multi-phase DC to DC converters C Coupling capacitance between shorted 40 pF P z Industrial battery chargers pins and mounting tab in the case z Switching power supplies d ,d pin - pin 1.7 mm S A d ,d pin - backside metal 5.5 mm S A Weight 9 g 2008 IXYS CORPORATION, All rights reserved DS100039(09/08)FMM22-05PF 2 TM Symbol Test Conditions Characteristic Values ISOPLUS i4-Pak Outline (T = 25C unless otherwise specified) Min. Typ. Max. J BV V = 0V, I = 250A 500 V DSS GS D V V = V , I = 1mA 3.0 5.0 V GS(th) DS GS D I V = 30 V, V = 0V 100 nA GSS GS DS I V = V 5 A DSS DS DSS V = 0V T = 125C 250 A GS J R V = 10V, I = 11A, Note 1 270 m DS(on) GS D g V = 20V, I = 11A, Note 1 20 S fs DS D C 2630 pF iss C V = 0V, V = 25V, f = 1MHz 310 pF oss GS DS C 27 pF rss t Resistive Switching Times 22 ns d(on) t V = 10V, V = 0.5 z V , I = 22A 25 ns r GS DS DSS D t R = 10 (External) 72 ns d(off) G t 21 ns f Q 50 nC g(on) Q V = 10V, V = 0.5 z V , I = 11A 16 nC gs GS DS DSS D Q 18 nC gd Ref: IXYS CO 0077 R0 R 0.95 C/W thJC R 0.15 C/W thCS Source-Drain Diode Characteristic Values T = 25C unless otherwise specified) J 3 Symbol Test Conditions Min. Typ. Max. I V = 0V 13 A S GS I Repetitive, pulse width limited by T 55 A SM JM V I = 22A, V = 0V, Note 1 1.5 V SD F GS t 200 ns rr I = 22A, -di/dt = 100A/s F I 7.0 A RM V = 100V, V = 0V R GS Q 0.7 C RM Note 1: Pulse test, t 300s, duty cycle, d 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537