Preliminary Technical Information Trench Gate HiperFET V = 250V FMM50-025TF DSS Power MOSFET I = 30A D25 R 60m DS(on) 33 T1 t = 84ns rr(typ) 5 5 Phase Leg Topology 4 4 T2 N-Channel 11 TM ISOPLUS i4-Pak 2 2 Symbol Test Conditions Maximum Ratings T -55 ... +150 C J T 150 C JM 1 T -55 ... +150 C stg Isolated Tab V 50/60H , RMS, t = 1min, Leads-to-Tab 2500 V~ ISOLD Z 5 T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD F Mounting Force 20..120/ 4.5..27 N/lb. C Features z Silicon Chip on Direct-Copper Bond (DCB) Substrate Symbol Test Conditions Maximum Ratings - UL Recognized Package - Isolated Mounting Surface V T = 25C to 150C 250 V DSS J - 2500V Electrical Isolation V T = 25C to 150C, R = 1M 250 V z DGR J GS Avalanche Rated z V Transient 30 V Low Q GSM G z Low Drain-to-Tab capacitance I T = 25C 30 A D25 C z Low package inductance I T = 25C, Pulse Width Limited by T 130 A DM C JM I T = 25C 25 A A C Advantages E T = 25C 400 mJ AS C z Low Gate Drive RRequirement dV/dt I I , V V , T 150C 15 V/ns S DM DD DSS J z High power density z P T = 25C 125 W Fast Intrinsic Rectifier D C z Low Drain to Ground Capacitance z Fast Switching Symbol Test Conditions Characteristic Values Applications Min. Typ. Max. z DC and AC Motor Drives C Coupling Capacitance Between Shorted 40 pF z P UPS, Solar and Wind Power Inverters Pins and Mounting Tab in the Case z Synchronous Rectifiers z Multi-Phase DC to DC Converters d ,d Pin - Pin 1.7 mm S A z Industrial Battery Chargers d ,d Pin - Backside Metal 5.5 mm S A z Switching Power Supplies Weight 9 g 2012 IXYS CORPORATION, All Rights Reserved DS100040A(06/12)FMM50-025TF TM Symbol Test Conditions Characteristic Values ISOPLUS i4-Pak Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 250 V DSS GS D V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D I V = 20 V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 1 A DSS DS DSS GS T = 125C 150 A J R V = 10V, I = 25A, Note 1 60 m DS(on) GS D g V = 10V, I = 25A, Note 1 35 58 S fs DS D C 4000 pF iss C V = 0V, V = 25 V, f = 1 MHz 410 pF oss GS DS C 60 pF rss t Resistive Switching Times 14 ns d(on) t V = 15V, V = 0.5 z V , I = 25A 25 ns r GS DS DSS D t R = 5 (External) 47 ns d(off) G t 25 ns f Q 78 nC g(on) Q V = 10V, V = 0.5 z V , I = 25A 19 nC gs GS DS DSS D Q 22 nC gd R 1.0 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 30 A S GS I Repetitive, Pulse Width Limited by T 200 A SM JM V I = 50A, V = 0V, Note 1 1.5 V SD F GS t 84 ns rr I = 25A, -di/dt = 250A/s F I 15.4 A RM V = 100V, V = 0V R GS Q 650 nC RM Note 1. Pulse test, t 300s, duty cycle, d 2 %. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537