Advance Technical Information TM TrenchT2 HiperFET V = 150V FMM110-015X2F DSS N-Channel Power I = 53A D25 MOSFET R 20m DS(on) 33 T1 t = 85ns rr(typ) 5 5 4 4 T2 11 Phase Leg Topology TM ISOPLUS i4-Pak 2 2 Symbol Test Conditions Maximum Ratings T -55 ... +175 C 1 J T 175 C Isolated Tab JM T -55 ... +175 C stg 5 V 50/60H , RMS, t = 1min, Leads-to-Tab 2500 ~V ISOLD Z T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD Features F Mounting Force 20..120 / 4.5..27 N/lb. C z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package Symbol Test Conditions Maximum Ratings - Isolated Mounting Surface V T = 25C to 175C 150 V - 2500V Electrical Isolation DSS J z Avalanche Rated V T = 25C to 175C, R = 1M 150 V DGR J GS z Low Q G V Transient 30 V z GSM Low Drain-to-Tab Capacitance z Low Package Inductance I T = 25C 53 A D25 C I T = 25C, Pulse Width Limited by T 300 A DM C JM Advantages I T = 25C 55 A A C z Easy to Mount E T = 25C 800 mJ AS C z Space Savings dV/dt I I , V V ,T 175C 10 V/ns z S DM DD DSS J High Power Density P T = 25C 180 W D C Applications z DC-DC Converters z Battery Chargers Symbol Test Conditions Characteristic Values z Switched-Mode and Resonant-Mode Min. Typ. Max. Power Supplies z DC Choppers C Coupling Capacitance Between Shorted 40 pF P z AC Motor Drives Pins and Mounting Tab in the Case z Uninterruptible Power Supplies d ,d Pin - Pin 1.7 mm z S A High Speed Power Switching d ,d Pin - Backside Metal 5.5 mm Applications S A Weight 9 g 2009 IXYS CORPORATION, All Rights Reserved DS100145(04/09)FMM110-015X2F 2 TM Symbol Test Conditions Characteristic Values ISOPLUS i4-Pak Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 150 V DSS GS D V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D I V = 20 V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 2 A DSS DS DSS GS T = 150C 500 A J R V = 10V, I = 55A, Note 1 20 m DS(on) GS D g V = 10V, I = 55A, Note 1 75 115 S fs DS D C 8600 pF iss C V = 0V, V = 25 V, f = 1 MHz 685 pF oss GS DS C 77 pF rss t Resistive Switching Times 33 ns d(on) t V = 10V, V = 0.5 z V , I = 55A 16 ns r GS DS DSS D t R = 3.3 (External) 33 ns d(off) G t 18 ns f Q 150 nC g(on) Q V = 10V, V = 0.5 z V , I = 55A 42 nC gs GS DS DSS D Q 46 nC gd Ref: IXYS CO 0077 R0 R 0.83 C/W thJC R 0.15 C/W thCS Source-Drain Diode Characteristic Values T = 25C Unless Otherwise Specified) J 3 Symbol Test Conditions Min. Typ. Max. I V = 0V 110 A S GS I Repetitive, Pulse Width Limited by T 440 A SM JM V I = 100A, V = 0V, Note 1 1.3 V SD F GS t 85 ns I = 55A, -di/dt = 100A/s rr F I 6.80 A RM V = 100V, V = 0V R GS Q 0.29 C RM Note 1: Pulse Test, t 300s, Duty Cycle, d 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537