SUP85N03-3m6P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition d 0.0036 at V = 10 V 85 GS TrenchFET Power MOSFET 30 67 d 0.0044 at V = 4.5 V GS 85 100 % R and UIS Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Secondary Synchronous Rectification T O-220AB DC/DC Converter D G GD S S T op V i e w Ordering Information: SUP85N03-3m6P-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS d T = 25 C C 85 Continuous Drain Current (T = 150 C) I J D d T = 70 C C 85 A Pulsed Drain Current I 120 DM I Avalanche Current 45 AS a L = 0.1 mH E 101 mJ Single Avalanche Energy AS b T = 25 C C 78.1 a P W Maximum Power Dissipation D c T = 25 C 3.1 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R Junction-to-Ambient (PCB Mount) 40 thJA C/W R Junction-to-Case (Drain) 1.6 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1 square PCB (FR-4 material). d. Package limited. Document Number: 65536 www.vishay.com S09-2271-Rev. A, 02-Nov-09 1SUP85N03-3m6P Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 DS DS D V V V = V , I = 250 A Gate Threshold Voltage 12.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 250 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I V = 30 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 30 V, V = 0 V, T = 150 C 250 DS GS J a I V 10 V, V = 10 V 50 A On-State Drain Current D(on) DS GS V = 10 V, I = 22 A 0.0030 0.0036 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 20 A 0.0036 0.0044 GS D a g V = 15 V, I = 20 A 110 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 3535 iss Output Capacitance C V = 0 V, V = 15 V, f = 1 MHz 680 pF oss GS DS C Reverse Transfer Capacitance 400 rss c Q 67 100 Total Gate Charge g c Q V = 15 V, V = 10 V, I = 20 A Gate-Source Charge 10.5 nC gs DS GS D c Q 12.2 Gate-Drain Charge gd R Gate Resistance f = 1 MHz 0.3 1.4 2.8 g c t 11 20 Turn-On Delay Time d(on) c t Rise Time V = 15 V, R = 1.5 10 20 r DD L ns c I 10 A, V = 10 V, R = 1 t D GEN g 35 53 Turn-Off Delay Time d(off) c t Fall Time 10 20 f b Drain-Source Body Diode Ratings and Characteristics T = 25 C C I Continuous Current 85 S A I Pulsed Current 120 SM a V I = 10 A, V = 0 V Forward Voltage 0.83 1.5 V SD F GS t Reverse Recovery Time 41 62 ns rr I I = 10 A, dI/dt = 100 A/s Peak Reverse Recovery Current 23 A RM(REC) F Q Reverse Recovery Charge 40 60 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65536 2 S09-2271-Rev. A, 02-Nov-09