SUP85N15-21 Vishay Siliconix N-Channel 150-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ()I (A) (BR)DSS DS(on) D Available 175 C Junction Temperature 0.021 at V = 10 V 150 85 GS RoHS* COMPLIANT APPLICATIONS Primary Side Switch T O-220AB D DRAIN connected to T A B G GD S T op V i e w S Ordering Information: SUP85N15-21 SUP85N15-21-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit V Drain-Source Voltage 150 DS V V Gate-Source Voltage 20 GS T = 25 C 85 C Continuous Drain Current (T = 175 C) I J D T = 125 C 50 C A I Pulsed Drain Current 180 DM I Avalanche Current 50 AS b E L = 0.1 mH 125 mJ Single Pulse Avalanche Energy AS c T = 25 C C 300 b P W Maximum Power Dissipation D d T = 25 C 2.4 A Operating Junction and Storage Temperature Range T , T - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient-Free Air R 62.5 thJA C/W R Junction-to-Case (Drain) 0.4 thJC Notes: a. Package limited. b. Duty cycle 1 %. c. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72003 www.vishay.com S-71662-Rev. B, 06-Aug-07 1SUP85N15-21 Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min Typ MaxUnit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 150 (BR)DSS DS D V V V = V , I = 250 A Gate-Threshold Voltage 24 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 120 V, V = 0 V 1 DS GS I V = 120 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 120 V, V = 0 V, T = 175 C 250 DS GS J a I V 5 V, V = 10 V 120 A On-State Drain Current D(on) DS GS V = 10 V, I = 30 A 0.0175 0.021 GS D a r V = 10 V, I = 30 A, T = 125 C 0.042 Drain-Source On-State Resistance DS(on) GS D J V = 10 V, I = 30 A, T = 175 C 0.055 GS D J a g V = 15 V, I = 30 A 25 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4750 iss C V = 0 V, V = 25 V, f = 1 MHz Output Capacitance 530 pF oss GS DS C Reverse Transfer Capacitance 220 rss c Q 76 110 Total Gate Charge g c Q V = 75 V, V = 10 V, I = 85 A 21 nC Gate-Source Charge gs DS GS D c Q 26 Gate-Drain Charge gd c t 22 35 Turn-On Delay Time d(on) c t 170 250 Rise Time r V = 75 V, R = 0.9 DD L ns c I 85 A, V = 10 V, R = 2.5 t D GEN G 40 60 Turn-Off Delay Time d(off) c t 170 250 Fall Time f b Source-Drain Diode Ratings and Characteristics (T = 25 C) C Continuous Current I 85 S A I Pulsed Current 180 SM a V I = 85 A, V = 0 V 1.0 1.5 V Forward Voltage SD F GS Reverse Recovery Time t 130 200 ns rr I I = 50 A, di/dt = 100 A/s Peak Reverse Recovery Current 812 A RM(REC) F Reverse Recovery Charge Q 0.52 1.2 C rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72003 2 S-71662-Rev. B, 06-Aug-07