X-On Electronics has gained recognition as a prominent supplier of SUP90140E-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SUP90140E-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SUP90140E-GE3 Vishay

SUP90140E-GE3 electronic component of Vishay
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See Product Specifications
Part No.SUP90140E-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET, N-CH, 200V, 90A, TO-220AB-3
Datasheet: SUP90140E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.5008 ea
Line Total: USD 4.5 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 500
Multiples : 1
500 : USD 4.4785
1000 : USD 4.439
2000 : USD 4.4007
2500 : USD 4.3612
3000 : USD 4.3229
4000 : USD 4.2834
5000 : USD 4.2438
10000 : USD 4.2042
20000 : USD 4.1646

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 4.5008
10 : USD 3.4484
100 : USD 2.9238
500 : USD 2.5716
1000 : USD 2.1168

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 7.7029
10 : USD 2.8097
25 : USD 2.6843
100 : USD 2.3709
500 : USD 2.0367
1000 : USD 1.7861
2500 : USD 1.6816
5000 : USD 1.6294

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 92
Multiples : 1
92 : USD 0.9542

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 34
Multiples : 1
34 : USD 2.1036

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rds On
Rds On Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Product Range
Msl
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SUP90140E-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUP90140E-GE3 and other electronic components in the MOSFETs category and beyond.

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SUP90140E www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Maximum 175 C junction temperature 0.017 at V = 10 V 90 GS 200 64 nC 100 % R and UIS tested g 0.018 at V = 7.5 V 88 GS Material categorization: for definitions of compliance please see TO-220AB www.vishay.com/doc 99912 APPLICATIONS D Power supplies: - Uninterruptible power supplies - AC/DC switch-mode power supplies - Lighting G Synchronous rectification SS D DC/DC converter G Top View Motor drive switch Ordering Information: S DC/AC inverter SUP90140E-GE3 (lead (Pb)-free and halogen-free) N-Channel MOSFET Solar micro inverter Class D audio amplifier ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 200 DS V Gate-Source Voltage V 20 GS T = 25 C 90 C Continuous Drain Current (T = 150 C) I J D T = 70 C 75 C A Pulsed Drain Current (t = 100 s) I 240 DM Avalanche Current I 60 AS L = 0.1 mH a Single Avalanche Energy E 180 mJ AS b T = 25 C 375 C a Maximum Power Dissipation P W D b T = 125 C 125 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT c Junction-to-Ambient (PCB Mount) R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR4 material). S15-2641-Rev. A, 16-Nov-15 Document Number: 79036 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUP90140E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 200 - - DS GS D V Gate Threshold Voltage V V = V , I = 250 A 2 - 4 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = 200 V, V = 0 V - - 1 DS GS A Zero Gate Voltage Drain Current I V = 200 V, V = 0 V, T = 125 C - - 150 DSS DS GS J V = 200 V, V = 0 V, T = 175 C - - 5 mA DS GS J a On-State Drain Current I V 10 V, V = 10 V 90 - - A D(on) DS GS V = 10 V, I = 30 A - 0.0138 0.0170 GS D a Drain-Source On-State Resistance R DS(on) V = 7.5 V, I = 30 A - 0.0141 0.0180 GS D a Forward Transconductance g V = 15 V, I = 30 A - 75 - S fs DS D b Dynamic Input Capacitance C - 4132 - iss Output Capacitance C V = 0 V, V = 100 V, f = 1 MHz - 246 - pF oss GS DS Reverse Transfer Capacitance C -21- rss c Total Gate Charge Q -64 96 g c Gate-Source Charge Q V = 100 V, V = 10 V, I = 60 A - 16.7 - nC gs DS GS D c Gate-Drain Charge Q -16.9- gd Gate Resistance R f = 1 MHz 1.5 3 5 g c Turn-On Delay Time t -13 26 d(on) c Rise Time t - 112 200 r V = 100 V, R = 1.66 DD L ns I 60 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -3570 d(off) c Fall Time t -80 150 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Pulsed Current (t = 100 s) I -- 240 A SM a Forward Voltage V I = 10 A, V = 0 V - 0.8 1.2 V SD F GS Reverse Recovery Time t - 160 320 ns rr Peak Reverse Recovery Charge I I = 30 A, di/dt = 100 A/s -11 20 A RM(REC) F Reverse Recovery Charge Q -0.9 1.8 C rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2641-Rev. A, 16-Nov-15 Document Number: 79036 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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