T2N7002BK,LM(T Toshiba

T2N7002BK MOSFETs Silicon N-Channel MOS T2N7002BKT2N7002BKT2N7002BKT2N7002BK 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Speed Switching 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance : R = 1.05 (typ.) ( V = 10 V) DS(ON) GS R = 1.15 (typ.) ( V = 5.0 V) DS(ON) GS R = 1.2 (typ.) ( V = 4.5 V) DS(ON) GS 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Source 3: Drain SOT23 Start of commercial production 2015-05 2015-2017 2017-11-30 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0T2N7002BK 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 400 mA D Drain current (pulsed) (Note 1), (Note 2) I 1200 DP Power dissipation (Note 3) P 320 mW D Power dissipation (Note 4) 1000 Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Repetitive rating pulse width limited by maximum channel temperature. pulse width 10 s, Duty 1 % Note 3: Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR-4 glass epoxy board (Cu pad: 0.42 mm2 3) Note 4: Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR-4 glass epoxy board (Cu pad: 645 mm2) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2015-2017 2017-11-30 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0