ID(On) -On-State Drain Current (Amps) Normalised RDS(on) and VGS(th) ID(On)-On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) Gate Threshold Voltage VGS(th) P-CHANNEL ENHANCEMENT ZVP2106A ZVP2106A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 TYPICAL CHARACTERISTICS FEATURES * 60 Volt V DS -3.5 *R =5 VGS= -2.0 DS(on) -20V -3.0 -1.8 VGS= -18V -14V -1.6 -10V -2.5 -1.4 D -12V -9V G -2.0 -1.2 S -10V -8V -1.0 E-Line -1.5 -9V -0.8 -7V -8V TO92 Compatible -1.0 -0.6 -7V -6V ABSOLUTE MAXIMUM RATINGS. -0.4 -6V -0.5 -5V -5V -0.2 PARAMETER SYMBOL VALUE UNIT -4V -4V 0 -3.5V 0 Drain-Source Voltage V -60 V DS 0 -10 -20 -30 -40 -50 0-2 -4 -6 -8 -10 Continuous Drain Current at T =25C I -280 mA amb D VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Pulsed Drain Current I -4 A DM Output Characteristics Saturation Characteristics Gate Source Voltage V 20 V GS Power Dissipation at T =25C P 700 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C -10 -1.6 j stg -1.4 -8 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb -1.2 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. -6 -1.0 VDS=-10V Drain-Source Breakdown BV -60 V I =-1mA, V =0V -0.8 DSS D GS Voltage -4 ID= -0.6 -1A Gate-Source Threshold V -1.5 -3.5 V ID=-1mA, V = V GS(th) DS GS -0.4 -2 Voltage -0.5A -0.2 -0.25A Gate-Body Leakage I 20 nA V = 20V, V =0V GSS GS DS 0 0 -2 -4 -6 -8 -10 0-2 -4 -6 -8 -10 Zero Gate Voltage Drain I -0.5 A V =-60 V, V =0 DSS DS GS Current -100 V =-48 V, V =0V, T=125C(2) A DS GS VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) On-State Drain Current(1) I -1 A V =-18 V, V =-10V D(on) DS GS Transfer Characteristics Voltage Saturation Characteristics Static Drain-Source On-State R 5 V =-10V,I =-500mA DS(on) GS D Resistance (1) VGS=-5V -6V -7V -8V -9V -10V Forward Transconductance g 150 mS V =-18V,I =-500mA 10 2.6 fs DS D (1)(2) 2.4 2.2 Input Capacitance (2) C 100 pF iss 2.0 Common Source Output C 60 pF V =-18V, V =0V, f=1MHz 5 oss DS GS 1.8 VGS=-10V Capacitance (2) ID=-0.5A 1.6 Reverse Transfer C 20 pF 1.4 rss Capacitance (2) 1.2 VGS=VDS 1.0 Turn-On Delay Time (2)(3) t 7ns ID=-1mA d(on) 0.8 Rise Time (2)(3) t 15 ns r 0.6 V -18V, I =-500mA 1 DD D -40 -20 0 20 40 60 80 100 120 140 160 180 -0.1 -1.0 -2.0 Turn-Off Delay Time (2)(3) t 12 ns d(off) Fall Time (2)(3) t 15 ns ID-Drain Current (Amps) Tj-Junction Temperature (C) f (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature (2) Sample test. ( 3-418 3-417 3 ) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Drain-Source Resistance RDS(on) RDS(ON) -Drain Source Resistance () VDS-Drain Source Voltage (Volts) ID(On) -On-State Drain Current (Amps) Normalised RDS(on) and VGS(th) ID(On)-On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) Gate Threshold Voltage VGS(th) P-CHANNEL ENHANCEMENT ZVP2106A ZVP2106A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 TYPICAL CHARACTERISTICS FEATURES * 60 Volt V DS -3.5 *R =5 VGS= -2.0 DS(on) -20V -3.0 -1.8 VGS= -18V -14V -1.6 -10V -2.5 -1.4 D -12V -9V G -2.0 -1.2 S -10V -8V -1.0 E-Line -1.5 -9V -0.8 -7V -8V TO92 Compatible -1.0 -0.6 -7V -6V ABSOLUTE MAXIMUM RATINGS. -0.4 -6V -0.5 -5V -5V -0.2 PARAMETER SYMBOL VALUE UNIT -4V -4V 0 -3.5V 0 Drain-Source Voltage V -60 V DS 0 -10 -20 -30 -40 -50 0-2 -4 -6 -8 -10 Continuous Drain Current at T =25C I -280 mA amb D VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Pulsed Drain Current I -4 A DM Output Characteristics Saturation Characteristics Gate Source Voltage V 20 V GS Power Dissipation at T =25C P 700 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C -10 -1.6 j stg -1.4 -8 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb -1.2 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. -6 -1.0 VDS=-10V Drain-Source Breakdown BV -60 V I =-1mA, V =0V -0.8 DSS D GS Voltage -4 ID= -0.6 -1A Gate-Source Threshold V -1.5 -3.5 V ID=-1mA, V = V GS(th) DS GS -0.4 -2 Voltage -0.5A -0.2 -0.25A Gate-Body Leakage I 20 nA V = 20V, V =0V GSS GS DS 0 0 -2 -4 -6 -8 -10 0-2 -4 -6 -8 -10 Zero Gate Voltage Drain I -0.5 A V =-60 V, V =0 DSS DS GS Current -100 V =-48 V, V =0V, T=125C(2) A DS GS VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) On-State Drain Current(1) I -1 A V =-18 V, V =-10V D(on) DS GS Transfer Characteristics Voltage Saturation Characteristics Static Drain-Source On-State R 5 V =-10V,I =-500mA DS(on) GS D Resistance (1) VGS=-5V -6V -7V -8V -9V -10V Forward Transconductance g 150 mS V =-18V,I =-500mA 10 2.6 fs DS D (1)(2) 2.4 2.2 Input Capacitance (2) C 100 pF iss 2.0 Common Source Output C 60 pF V =-18V, V =0V, f=1MHz 5 oss DS GS 1.8 VGS=-10V Capacitance (2) ID=-0.5A 1.6 Reverse Transfer C 20 pF 1.4 rss Capacitance (2) 1.2 VGS=VDS 1.0 Turn-On Delay Time (2)(3) t 7ns ID=-1mA d(on) 0.8 Rise Time (2)(3) t 15 ns r 0.6 V -18V, I =-500mA 1 DD D -40 -20 0 20 40 60 80 100 120 140 160 180 -0.1 -1.0 -2.0 Turn-Off Delay Time (2)(3) t 12 ns d(off) Fall Time (2)(3) t 15 ns ID-Drain Current (Amps) Tj-Junction Temperature (C) f (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature (2) Sample test. ( 3-418 3-417 3 ) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Drain-Source Resistance RDS(on) RDS(ON) -Drain Source Resistance () VDS-Drain Source Voltage (Volts)