ID(On) -On-State Drain Current (Amps)
Normalised RDS(on) and VGS(th)
ID(On)-On-State Drain Current (Amps)
ID(On) -On-State Drain Current (Amps)
Gate Threshold Voltage VGS(th)
P-CHANNEL ENHANCEMENT
ZVP2106A ZVP2106A
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
TYPICAL CHARACTERISTICS
FEATURES
* 60 Volt V
DS
-3.5
*R =5
VGS= -2.0 DS(on)
-20V
-3.0 -1.8
VGS=
-18V
-14V
-1.6 -10V
-2.5
-1.4 D
-12V
-9V
G
-2.0 -1.2
S
-10V -8V
-1.0
E-Line
-1.5 -9V
-0.8
-7V
-8V
TO92 Compatible
-1.0
-0.6
-7V
-6V
ABSOLUTE MAXIMUM RATINGS.
-0.4
-6V
-0.5
-5V -5V
-0.2 PARAMETER SYMBOL VALUE UNIT
-4V
-4V
0
-3.5V
0
Drain-Source Voltage V -60 V
DS
0 -10 -20 -30 -40 -50 0-2 -4 -6 -8 -10
Continuous Drain Current at T =25C I -280 mA
amb D
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)
Pulsed Drain Current I -4 A
DM
Output Characteristics Saturation Characteristics
Gate Source Voltage V 20 V
GS
Power Dissipation at T =25C P 700 mW
amb tot
Operating and Storage Temperature Range T :T -55 to +150 C
-10
-1.6 j stg
-1.4
-8 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated).
amb
-1.2
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
-6 -1.0
VDS=-10V
Drain-Source Breakdown BV -60 V I =-1mA, V =0V
-0.8
DSS D GS
Voltage
-4
ID=
-0.6
-1A
Gate-Source Threshold V -1.5 -3.5 V ID=-1mA, V = V
GS(th) DS GS
-0.4
-2
Voltage
-0.5A
-0.2
-0.25A
Gate-Body Leakage I 20 nA V = 20V, V =0V
GSS GS DS
0
0 -2 -4 -6 -8 -10
0-2 -4 -6 -8 -10 Zero Gate Voltage Drain I -0.5 A V =-60 V, V =0
DSS DS GS
Current -100 V =-48 V, V =0V, T=125C(2)
A
DS GS
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
On-State Drain Current(1) I -1 A V =-18 V, V =-10V
D(on) DS GS
Transfer Characteristics
Voltage Saturation Characteristics
Static Drain-Source On-State R 5 V =-10V,I =-500mA
DS(on) GS D
Resistance (1)
VGS=-5V -6V -7V -8V -9V -10V
Forward Transconductance g 150 mS V =-18V,I =-500mA
10 2.6 fs DS D
(1)(2)
2.4
2.2
Input Capacitance (2) C 100 pF
iss
2.0
Common Source Output C 60 pF V =-18V, V =0V, f=1MHz
5
oss DS GS
1.8 VGS=-10V
Capacitance (2)
ID=-0.5A
1.6
Reverse Transfer C 20 pF
1.4 rss
Capacitance (2)
1.2
VGS=VDS
1.0
Turn-On Delay Time (2)(3) t 7ns
ID=-1mA d(on)
0.8
Rise Time (2)(3) t 15 ns
r
0.6 V -18V, I =-500mA
1
DD D
-40 -20 0 20 40 60 80 100 120 140 160 180
-0.1 -1.0 -2.0
Turn-Off Delay Time (2)(3) t 12 ns
d(off)
Fall Time (2)(3) t 15 ns
ID-Drain Current (Amps) Tj-Junction Temperature (C)
f
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2%
On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature
(2) Sample test.
(
3-418 3-417 3
)
Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
Drain-Source Resistance RDS(on)
RDS(ON) -Drain Source Resistance () VDS-Drain Source Voltage (Volts) ID(On) -On-State Drain Current (Amps)
Normalised RDS(on) and VGS(th)
ID(On)-On-State Drain Current (Amps)
ID(On) -On-State Drain Current (Amps)
Gate Threshold Voltage VGS(th)
P-CHANNEL ENHANCEMENT
ZVP2106A ZVP2106A
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
TYPICAL CHARACTERISTICS
FEATURES
* 60 Volt V
DS
-3.5
*R =5
VGS= -2.0 DS(on)
-20V
-3.0 -1.8
VGS=
-18V
-14V
-1.6 -10V
-2.5
-1.4 D
-12V
-9V
G
-2.0 -1.2
S
-10V -8V
-1.0
E-Line
-1.5 -9V
-0.8
-7V
-8V
TO92 Compatible
-1.0
-0.6
-7V
-6V
ABSOLUTE MAXIMUM RATINGS.
-0.4
-6V
-0.5
-5V -5V
-0.2 PARAMETER SYMBOL VALUE UNIT
-4V
-4V
0
-3.5V
0
Drain-Source Voltage V -60 V
DS
0 -10 -20 -30 -40 -50 0-2 -4 -6 -8 -10
Continuous Drain Current at T =25C I -280 mA
amb D
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)
Pulsed Drain Current I -4 A
DM
Output Characteristics Saturation Characteristics
Gate Source Voltage V 20 V
GS
Power Dissipation at T =25C P 700 mW
amb tot
Operating and Storage Temperature Range T :T -55 to +150 C
-10
-1.6 j stg
-1.4
-8 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated).
amb
-1.2
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
-6 -1.0
VDS=-10V
Drain-Source Breakdown BV -60 V I =-1mA, V =0V
-0.8
DSS D GS
Voltage
-4
ID=
-0.6
-1A
Gate-Source Threshold V -1.5 -3.5 V ID=-1mA, V = V
GS(th) DS GS
-0.4
-2
Voltage
-0.5A
-0.2
-0.25A
Gate-Body Leakage I 20 nA V = 20V, V =0V
GSS GS DS
0
0 -2 -4 -6 -8 -10
0-2 -4 -6 -8 -10 Zero Gate Voltage Drain I -0.5 A V =-60 V, V =0
DSS DS GS
Current -100 V =-48 V, V =0V, T=125C(2)
A
DS GS
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
On-State Drain Current(1) I -1 A V =-18 V, V =-10V
D(on) DS GS
Transfer Characteristics
Voltage Saturation Characteristics
Static Drain-Source On-State R 5 V =-10V,I =-500mA
DS(on) GS D
Resistance (1)
VGS=-5V -6V -7V -8V -9V -10V
Forward Transconductance g 150 mS V =-18V,I =-500mA
10 2.6 fs DS D
(1)(2)
2.4
2.2
Input Capacitance (2) C 100 pF
iss
2.0
Common Source Output C 60 pF V =-18V, V =0V, f=1MHz
5
oss DS GS
1.8 VGS=-10V
Capacitance (2)
ID=-0.5A
1.6
Reverse Transfer C 20 pF
1.4 rss
Capacitance (2)
1.2
VGS=VDS
1.0
Turn-On Delay Time (2)(3) t 7ns
ID=-1mA d(on)
0.8
Rise Time (2)(3) t 15 ns
r
0.6 V -18V, I =-500mA
1
DD D
-40 -20 0 20 40 60 80 100 120 140 160 180
-0.1 -1.0 -2.0
Turn-Off Delay Time (2)(3) t 12 ns
d(off)
Fall Time (2)(3) t 15 ns
ID-Drain Current (Amps) Tj-Junction Temperature (C)
f
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2%
On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature
(2) Sample test.
(
3-418 3-417 3
)
Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
Drain-Source Resistance RDS(on)
RDS(ON) -Drain Source Resistance () VDS-Drain Source Voltage (Volts)