X-On Electronics has gained recognition as a prominent supplier of BSZ096N10LS5ATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSZ096N10LS5ATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSZ096N10LS5ATMA1 Infineon

Name: BSZ096N10LS5ATMA1
Brand: Infineon
SKU: BSZ096N10LS5ATMA1_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

BSZ096N10LS5ATMA1 electronic component of Infineon

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See Product Specifications

Part No.	BSZ096N10LS5ATMA1
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET TRENCH >=100V
Datasheet:	BSZ096N10LS5ATMA1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5000: USD 0.688 ea
Line Total: USD 3440

Availability - 0

MOQ: 5000 Multiples: 1
Pack Size: 1

BSZ096N10LS5ATMA1 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
4626 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 3 Multiples : 1	3 : USD 1.5985 10 : USD 1.2581 25 : USD 1.2492 100 : USD 0.9626 250 : USD 0.9551 500 : USD 0.8184 1000 : USD 0.7196 3000 : USD 0.7021

We are delighted to provide the BSZ096N10LS5ATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSZ096N10LS5ATMA1 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

BSZ096N10LS5 MOSFET TM TSDSON-8 FL (S3O8) OptiMOS 5 Power-Transistor , 100 V Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R product (FOM) DS(on) N-channel, Logic level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters S1 8D Parameter Value Unit S2 7D V 100 V DS S3 6D RDS(on),max 9.6 m G4 5D I 62 A D Q 30 nC OSS Q (0V...4.5V) 12 nC G Type / Ordering Code Package Marking Related Links BSZ096N10LS5 PG-TSDSON-8 FL 096N10L - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.3, 2020-12-22TM OptiMOS 5 Power-Transistor , 100 V BSZ096N10LS5 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.3, 2020-12-22

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 40 A 40 A
Vds - Drain-Source Breakdown Voltage 100 V 100 V
Rds On - Drain-Source Resistance 9.6 mOhms 9.6 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 1.1 V 1.1 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 69 W 69 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TSDSON - 8 TSDSON - 8
Packaging Cut Tape Cut Tape
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 10 V 10 V
Qg - Gate Charge 22 nC 22 nC
Channel Mode Enhancement Enhancement
Tradename Optimos Optimos
Configuration Single Quad Drain Triple Source Single Quad Drain Triple Source
Height 1.1 mm 1.1 mm
Length 3.3 mm 3.3 mm
Series Optimos 5 Optimos 5
Transistor Type 1 N - Channel 1 N - Channel
Width 3.3 mm 3.3 mm
Brand Infineon Technologies Infineon Technologies
Forward Transconductance - Min 22 S 22 S
Development Kit Eval_1K4w_Zvs_Fb_Cfd7 Eval_1K4w_Zvs_Fb_Cfd7
Fall Time 5.3 ns 5.3 ns
Product Type Mosfet Mosfet
Rise Time 4.6 ns 4.6 ns
Factory Pack Quantity : 5000 5000
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 21 ns 21 ns
Typical Turn-On Delay Time 5.7 ns 5.7 ns
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Taric 8541290000 8541290000