X-On Electronics has gained recognition as a prominent supplier of BSZ096N10LS5ATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSZ096N10LS5ATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSZ096N10LS5ATMA1 Infineon

Name: BSZ096N10LS5ATMA1
Brand: Infineon
SKU: BSZ096N10LS5ATMA1_Infineon
Availability: InStock
Rating: 5 (11 reviews)

BSZ096N10LS5ATMA1 electronic component of Infineon

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See Product Specifications

Part No.	BSZ096N10LS5ATMA1
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET TRENCH >=100V
Datasheet:	BSZ096N10LS5ATMA1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

46: USD 1.3709 ea
Line Total: USD 63.06

Availability - 3470
Ship by Fri. 11 Apr to Thu. 17 Apr

MOQ: 46 Multiples: 1
Pack Size: 1

BSZ096N10LS5ATMA1 More Buying Options & Price Grid(s)

Availability Price Buy Price Quantity

3470

Ship by Fri. 11 Apr to Thu. 17 Apr

MOQ : 46
Multiples : 1

46 : USD 1.3709
55 : USD 1.153
55 : USD 1.1402
55 : USD 1.1332
100 : USD 0.9012
250 : USD 0.8833
500 : USD 0.7584
1000 : USD 0.6681
3000 : USD 0.639

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

40 A 40 A

Vds - Drain-Source Breakdown Voltage

100 V 100 V

Rds On - Drain-Source Resistance

9.6 mOhms 9.6 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

1.1 V 1.1 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

69 W 69 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

TSDSON - 8 TSDSON - 8

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Qg - Gate Charge

22 nC 22 nC

Channel Mode

Enhancement Enhancement

Tradename

Optimos Optimos

Configuration

Single Quad Drain Triple Source Single Quad Drain Triple Source

Height

1.1 mm 1.1 mm

Length

3.3 mm 3.3 mm

Series

Optimos 5 Optimos 5

Transistor Type

1 N - Channel 1 N - Channel

Width

3.3 mm 3.3 mm

Brand

Infineon Technologies Infineon Technologies

Forward Transconductance - Min

22 S 22 S

Development Kit

Eval_1K4w_Zvs_Fb_Cfd7 Eval_1K4w_Zvs_Fb_Cfd7

Fall Time

5.3 ns 5.3 ns

Product Type

Mosfet Mosfet

Rise Time

4.6 ns 4.6 ns

Factory Pack Quantity :

5000 5000

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

21 ns 21 ns

Typical Turn-On Delay Time

5.7 ns 5.7 ns

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

BSZ096N10LS5ATMA1 Alternative Parts

We are delighted to provide the BSZ096N10LS5ATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSZ096N10LS5ATMA1 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

BSZ096N10LS5 MOSFET TM TSDSON-8 FL (S3O8) OptiMOS 5 Power-Transistor , 100 V Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R product (FOM) DS(on) N-channel, Logic level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters S1 8D Parameter Value Unit S2 7D V 100 V DS S3 6D RDS(on),max 9.6 m G4 5D I 62 A D Q 30 nC OSS Q (0V...4.5V) 12 nC G Type / Ordering Code Package Marking Related Links BSZ096N10LS5 PG-TSDSON-8 FL 096N10L - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.3, 2020-12-22TM OptiMOS 5 Power-Transistor , 100 V BSZ096N10LS5 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.3, 2020-12-22

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
3470 Ship by Fri. 11 Apr to Thu. 17 Apr MOQ : 46 Multiples : 1	46 : USD 1.3709 55 : USD 1.153 55 : USD 1.1402 55 : USD 1.1332 100 : USD 0.9012 250 : USD 0.8833 500 : USD 0.7584 1000 : USD 0.6681 3000 : USD 0.639

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