DMN3009SK3 Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I max D BV R max DSS DS(ON) Low Input Capacitance T = +25C C Lead-Free Finish RoHS Compliant (Notes 1 & 2) 5.5m V = 10V 80A GS 30V Halogen and Antimony Free. Green Device (Note 3) 9.0m V = 4.5V 60A GS Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: TO252 (DPAK) resistance (R ) and yet maintain superior switching performance, DS(ON) Case Material: Molded Plastic, Green Molding Compound. making it ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections: See Diagram DC-DC Converters Weight: 0.33 grams (Approximate) Industrial Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 4) Part Number Case Packaging DMN3009SK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN3009SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS T = +25C 80 C I A Continuous Drain Current, V = 10V (Note 7) D GS 60 T = +70C C T = +25C 20 A A Continuous Drain Current, V = 10V (Note 6) I GS D 16 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 100 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 20 A S Pulsed Continuous Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 100 A SM Avalanche Current, L = 0.1mH (Note 8) I 33 A AS Avalanche Energy, L = 0.1mH (Note 8) 55 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.6 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 78 C/W R JA Total Power Dissipation (Note 6) 3.4 W T = +25C P A D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 37 C/W JA Total Power Dissipation (Note 7) T = +25C P 44 W C D Thermal Resistance, Junction to Case (Note 7) R 2.8 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 30 - - V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current - - 1 A I V = 24V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage 1 - 2.5 V V V = V , I = 250A GS(TH) DS GS D - 2.5 5.5 V = 10V, I = 30A GS D Static Drain-Source On-Resistance R m DS(ON) - 4.0 9.0 V = 4.5V, I = 15A GS D Diode Forward Voltage V - 0.7 1 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C - 2000 - pF iss V = 15V, V = 0V, DS GS 315 Output Capacitance C - - pF oss f = 1MHz 247 Reverse Transfer Capacitance - - pF Crss 2.2 Gate Resistance - - R V = 0V, V = 0V, f = 1MHz g DS GS - 20 - nC Total Gate Charge (V = 4.5V) Q GS g - 42 - nC Total Gate Charge (V = 10V) Q GS g V = 15V, I = 15A DS D Gate-Source Charge - 4.7 - nC Q gs Gate-Drain Charge - 7.4 - nC Q gd 3.9 Turn-On Delay Time t - - ns D(ON) 4.1 Turn-On Rise Time t - - ns R VDD = 15V, VGS = 10V, 31 Turn-Off Delay Time t - - ns R = 3.3, , I = 15A D(OFF) G D 15 Turn-Off Fall Time t - - ns F 15 Reverse Recovery Time t - - ns RR I = 15A, di/dt = 100A/s F 6.0 Reverse Recovery Charge - - nC Q rr Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMN3009SK3 April 2017 Diodes Incorporated www.diodes.com Document number: DS37569 Rev. 3 - 2 ADVANCED INFORMATION