Data Sheet IPD80R2k7C3A TM CoolMOS Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R T = 25C 2.7 W DS(on)max j Extreme dv/dt rated Q 12 nC g,typ High peak current capability Qualified according to AEC Q101 Green package (RoHS compliant), Pb-free lead plating, halogen free for mold compound PG-TO252-3 Ultra low gate charge Ultra low effective capacitances TM CoolMOS 800V designed for: Automotive application with high DC bulk voltage Switching Application ( i.e. active clamp forward ) Type Package Marking IPD80R2k7C3A PG-TO252-3 80C2k7A Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25C 2 A D C T =100C 1.2 C 2) I T =25C 6 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =1A, V =50V 90 mJ AS D DD 2),3) E I =2A, V =50V 0.05 Avalanche energy, repetitive t AR D DD AR 2),3) I 2 A Avalanche current, repetitive t AR AR MOSFET dv /dt ruggedness dv /dt V =0640 V 50 V/ns DS Gate source voltage V static 20 V GS AC (f >1 Hz) 30 Power dissipation P T =25C 42 W tot C Operating, Storage temperature Tj,Tstg -40 ... 150 C Final Data Sheet, Rev. 1.1 page 1 2013-11-21IPD80R2k7C3A Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous diode forward current 2 A S T =25C C 2) I 6 Diode pulse current S,pulse 4) dv /dt 4 V/ns Reverse diode dv /dt Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 3 K/W thJC SMD version, device R on PCB, minimal - - 62 thJA footprint Thermal resistance, junction - ambient SMD version, device 2 on PCB, 6 cm cooling - 35 - 5) area Soldering temperature, reflow T reflow MSL1 - - 260 C sold soldering Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics 1) V V =0V, I =250A 800 - - V Drain-source breakdown voltage (BR)DSS GS D V V =0V, I =2A Avalanche breakdown voltage - 870 - (BR)DS GS D V V =V , I =0.12mA Gate threshold voltage 2.1 3 3.9 GS(th) DS GS D V =800V, V =0V, DS GS Zero gate voltage drain current I - - 5 A DSS T =25C j V =800V, V =0V, DS GS - 25 - T =150C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS V =10V, I =1.2A, GS D R Drain-source on-state resistance - 2.4 2.7 W DS(on) T =25C j V =10V, I =1.2A, GS D - 5.5 - T =150C j R Gate resistance f =1MHz, open drain - 1.2 - W G Final Data Sheet, Rev. 1.1 page 2 2013-11-21