X-On Electronics has gained recognition as a prominent supplier of SUP70090E-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SUP70090E-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SUP70090E-GE3 Vishay

SUP70090E-GE3 electronic component of Vishay
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Part No.SUP70090E-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 100V Vds 50A Id 0.0089Vgs Rds(On)
Datasheet: SUP70090E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.454 ea
Line Total: USD 3.45 
Availability - 404
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
404
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 3.454
10 : USD 2.519
100 : USD 1.859
500 : USD 1.573
1000 : USD 1.507

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SUP70090E-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUP70090E-GE3 and other electronic components in the MOSFETs category and beyond.

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SUP70090E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET c V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Maximum 175 C junction temperature 0.0089 at V = 10 V 50 GS 100 33 nC Q / Q ratio < 1 optimizes switching gd gs 0.0093 at V = 7.5 V 50 GS characteristics 100 % R and UIS tested g TO-220AB Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS D Power supply - Secondary synchronous rectification SS DC/DC converter D G Power tools Top View G Motor drive switch Ordering Information: SUP70090E-GE3 (lead (Pb)-free and halogen-free) DC/AC inverter S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS c T = 25 C 50 C Continuous Drain Current (T = 150 C) I J D c T = 70 C 50 C A Pulsed Drain Current (t = 100 s) I 120 DM Avalanche Current I 40 AS a Single Avalanche Energy L = 0.1 mH E 80 mJ AS T = 25 C 125 C a Maximum Power Dissipation P W D b = 70 C 87.5 T C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT b Junction-to-Ambient (PCB Mount) R 40 thJA C/W Junction-to-Case (Drain) R 1.2 thJC Notes a. Duty cycle 1 %. b. When mounted on 1 square PCB (FR4 material). c. Package limited. S16-0163-Rev. A, 01-Feb-16 Document Number: 65436 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SUP70090E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - DS GS D V Gate Threshold Voltage V V = V , I = 250 A 2 - 4 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = 100 V, V = 0 V - - 1 DS GS A Zero Gate Voltage Drain Current I V = 100 V, V = 0 V, T = 125 C - - 150 DSS DS GS J V = 100 V, V = 0 V, T = 175 C - - 5 mA DS GS J a On-State Drain Current I V 10 V, V = 10 V 50 - - A D(on) DS GS V = 10 V, I = 20 A - 0.0074 0.0089 GS D a Drain-Source On-State Resistance R DS(on) V = 7.5 V, I = 15 A - 0.0077 0.0093 GS D a Forward Transconductance g V = 15 V, I = 10 A - 38 - S fs DS D b Dynamic Input Capacitance C - 1950 - iss Output Capacitance C V = 0 V, V = 50 V, f = 1 MHz - 845 - pF oss GS DS Reverse Transfer Capacitance C -54- rss c Total Gate Charge Q -33 50 g c Gate-Source Charge Q V = 50 V, V = 10 V, I = 20 A -8.8 - nC gs DS GS D c Gate-Drain Charge Q -7.5- gd Gate Resistance R f = 1 MHz 0.7 3.5 7 g c Turn-On Delay Time t -15 30 d(on) c Rise Time t -27 54 r V = 50 V, R = 5 DD L ns I 10 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -3672 d(off) c Fall Time t -45 90 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Pulsed Current (t = 100 s) I -- 120 A SM a Forward Voltage V I = 10 A, V = 0 V - 0.8 1.5 V SD F GS Reverse Recovery Time t - 77 116 ns rr Peak Reverse Recovery Charge I I = -10 A, dI/dt = 100 A/s -4.2 6.3 A RM(REC) F Reverse Recovery Charge Q - 145 365 nC rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0163-Rev. A, 01-Feb-16 Document Number: 65436 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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