SUP53P06-20 www.vishay.com Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES TO-220AB TrenchFET power MOSFET 100 % UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS SS Load switch D S G Top View PRODUCT SUMMARY G V (V) -60 DS R max. () at V = -10 V 0.0195 DS(on) GS R max. () at V = -4.5 V 0.0250 DS(on) GS Q typ. (nC) 76 g D a I (A) -53 D P-Channel MOSFET Configuration Single ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SUP53P06-20-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-source voltage V -60 DS V Gate-source voltage V 20 GS a T = 25 C -53 C T = 70 C -46.8 C Continuous drain current (T = 150 C) I J D b T = 25 C 9.2 A A b T = 70 C -8.1 A Pulsed drain current I -150 DM Avalanche current pulse I -45 AS L = 0.1 mH Single pulse avalanche energy E 101 mJ AS a T = 25 C 69 C Continuous source-drain diode current I A S b T = 25 C 2.1 A a T = 25 C 104.2 C a T = 70 C 66.7 C Maximum power dissipation P W D b T = 25 C 3.1 A b T = 70 C 2 A Operating junction and storage temperature range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT b Maximum junction-to-ambient Steady state R 33 40 thJA C/W Maximum junction-to-case Steady state R 0.98 1.2 thJC Notes a. Based on T = 25 C C S20-0964-Rev. C, 21-Dec-2020 Document Number: 68633 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SUP53P06-20 www.vishay.com Vishay Siliconix b. Surface mounted on 1 x 1 FR4 board SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -60 - - V DS GS D V temperature coefficient V /T -68 - DS DS J I = -250 A mV/C D V temperature coefficient V /T --5.2- GS(th) GS(th) J Gate-source threshold voltage V V = V , I = -250 A -1 - -3 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = -60 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I A DSS V = -60 V, V = 0 V, T = 55 C - - -10 DS GS J a On-state drain current I V = -5 V, V = -10 V -120 - - A D(on) DS GS V = -10 V, I = -30 A - 0.0160 0.0195 GS D a Drain-source on-state resistance R DS(on) V = -4.5 V, I = -20 A - 0.0200 0.0250 GS D a Forward transconductance g V = -15 V, I = -50 A 20 - - S fs DS D b Dynamic Input capacitance C -3500- iss Output capacitance C V = -25 V, V = 0 V, f = 1 MHz -390 - pF oss DS GS Reverse transfer capacitance C -290- rss V = -30 V, V = -10 V, I = -55 A - 76 115 DS GS D Total gate charge Q g -38 60 nC Gate-source charge Q V = -30 V, V = -4.5 V, I = -55 A -16 - gs DS GS D Gate-drain charge Q -19- gd Gate resistance R f = 1 MHz - 5.2 - g Turn-on delay time t -10 15 d(on) Rise time t -7 15 r V = -2 V, R = 2 DD L ns I -10 A, V = -10 V, R = 1 Turn-off delay time t -D GEN g70110 d(off) Fall time t -40 60 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - -69 S C A a Pulse diode forward current I - - -150 SM Body diode voltage V I = -30 A - -1 -1.5 V SD S Body diode reverse recovery time t -45 68 ns rr Body diode reverse recovery charge Q - 59 120 nC rr I = -50 A, di/dt = 100 A/s, T = 25 C F J Reverse recovery fall time t -29 - a ns Reverse recovery rise time t -16 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0964-Rev. C, 21-Dec-2020 Document Number: 68633 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000