SUM27N20-78 Vishay Siliconix N-Channel 200 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) DS DS(on) D 175 C Junction Temperature 0.078 at V = 10 V 27 GS Low Thermal Resistance Package 200 0.083 at V = 6 V 26 GS PWM Optimized for Fast Switching Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-263 Isolated DC/DC Converters - Primary-Side Switch D G D S G Top View SUM27N20-78 S Ordering Information: SUM27N20-78-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C Parameter Symbol Limit Unit V Drain-Source Voltage 200 DS V V Gate-Source Voltage 20 GS T = 25 C 27 C Continuous Drain Current (T = 175 C) I J D T = 125 C 15.5 C A I Pulsed Drain Current 60 DM I Avalanche Current 18 AR a L = 0.1 mH E 16.2 mJ Repetitive Avalanche Energy AR b T = 25 C 150 C a P W Maximum Power Dissipation D c 3.75 T = 25 C A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c Junction-to-Ambient R PCB Mount (TO-263) 40 thJA C/W Junction-to-Case (Drain) R 1 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR-4 material). Document Number: 72108 www.vishay.com S11-2308-Rev. C, 21-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUM27N20-78 Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min . Typ. Max. Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 200 DS GS D V V V = V , I = 250 A Gate-Threshold Voltage 24 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 160 V, V = 0 V 1 DS GS I V = 160 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 160 V, V = 0 V, T = 175 C 250 DS GS J a I V 15 V, V = 10 V 60 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.064 0.078 GS D a V = 10 V, I = 20 A, T = 125 C 0.160 Drain-Source On-State Resistance GS D J R DS(on) V = 10 V, I = 20 A, T = 175 C 0.205 GS D J Drain-Source on State Resistance V = 6 V, I = 15 A 0.068 0.083 GS D a g V = 15 V, I = 30 A 15 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2150 iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz 215 pF oss GS DS C Reverse Transfer Capacitance 90 rss c Q 40 60 Total Gate Charge g c Q V = 100 V, V = 10 V, I = 20 A Gate-Source Charge 11 nC gs DS GS D c Q 14 Gate-Drain Charge gd R Gate Resistance 2 G c t 15 25 Turn-On Delay Time d(on) c t Rise Time V = 100 V, R = 5 35 55 r DD L ns c I 20 A, V = 10 V, R = 2.5 t D GEN G 40 60 Turn-Off Delay Time d(off) c t Fall Time 30 45 f b Source-Drain Diode Ratings and Characteristics (T = 25 C) C I Continuous Current 27 S A I Pulsed Current 60 SM a V I = 20 A, V = 0 V 11.5 V Forward Voltage SD F GS Reverse Recovery Time t 115 170 ns rr I I = 50 A, dI/dt = 100 A/s Peak Reverse Recovery Charge 7.5 12 A RM(REC) F Reverse Recovery Charge Q 0.43 1.02 C rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72108 2 S11-2308-Rev. C, 21-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000