SUM40N15-38 Vishay Siliconix N-Channel 150-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs V (V) R ()I (A) DS DS(on) D 175 C Junction Temperature 0.038 at V = 10 V 40 GS 150 New Low Thermal Resistance Package 0.042 at V = 6 V 38 GS PWM Optimized Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-263 G G D S Top View S N-Channel MOSFET Ordering Information: SUM40N15-38-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit Drain-Source Voltage V 150 DS V V Gate-Source Voltage 20 GS T = 25 C 40 C Continuous Drain Current (T = 175 C) I J D T = 125 C 23 C A I Pulsed Drain Current 80 DM I Avalanche Current 40 AR a E L = 0.1 mH 80 mJ Repetitive Avalanche Energy AR b T = 25 C C 166 a P Maximum Power Dissipation W D c T = 25 C 3.75 A Operating Junction and Storage Temperature Range T , T - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R 40 Junction-to-Ambient (PCB Mount TO-263 ) thJA C/W R Junction-to-Case (Drain) 0.9 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1 square PCB (FR-4 material). Document Number: 72155 www.vishay.com S09-1340-Rev. B, 13-Jul-09 1SUM40N15-38 Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 150 DS DS D V V V = V , I = 250 A Gate-Threshold Voltage 24 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 120 V, V = 0 V 1 DS GS I V = 120 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 120 V, V = 0 V, T = 175 C 250 DS GS J a I V 5 V, V = 10 V 80 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.030 0.038 GS D V = 6 V, I = 10 A 0.033 0.042 GS D a R Drain-Source On-State Resistance DS(on) V = 10 V, I = 15 A, T = 125 C 0.076 GS D J V = 10 V, I = 15 A, T = 175 C 0.100 GS D J a g V = 15 V, I = 15 A 10 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2500 iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz 290 pF oss GS DS C Reverse Transfer Capacitance 190 rss Gate Resistance R 2 g c Q Total Gate Charge 38 60 g c Q V = 75 V, V = 10 V, I = 40 A 13 nC Gate-Source Charge gs DS GS D c Q Gate-Drain Charge 13 gd c t 15 25 Turn-On Delay Time d(on) c t Rise Time V = 75 V, R = 1.80 130 200 r DD L ns c I 40 A, V = 10 V, R = 2.5 t D GEN g 30 45 Turn-Off Delay Time d(off) c t Fall Time 90 140 f b Source-Drain Diode Ratings and Characteristics T = 25 C C I Continuous Current 40 S A I Pulsed Current 80 SM a V I = 40 A, V = 0 V 1.0 1.5 V Forward Voltage SD F GS t Reverse Recovery Time 100 150 ns rr I I = 40 A, dI/dt = 100 A/s Peak Reverse Recovery Current 58 A RM(REC) F Q Reverse Recovery Charge 0.25 0.6 C rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72155 2 S09-1340-Rev. B, 13-Jul-09