SUM18N25-165 Vishay Siliconix N-Channel 250-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) I (A) r () (BR)DSS D DS(on) 175 C Junction Temperature RoHS 0.165 at V = 10 V 250 18 GS COMPLIANT Low Thermal Resistance Package D TO-263 G G D S Top View S Ordering Information: SUM18N25-165-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit V Drain-Source Voltage 250 DS V Gate-Source Voltage V 20 GS T = 25 C 18 C Continuous Drain Current (T = 175 C) I J D T = 125 C 10.4 C A I Pulsed Drain Current 20 DM Single Pulse Avalanche Current I 5 AS a E L = 0.1 mH 1.25 mJ Single Pulse Avalanche Energy AS b T = 25 C C 150 a P W Maximum Power Dissipation D c T = 25 C 3.75 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R Junction-to-Ambient 40 PCB Mount (TO-263) thJA C/W R Junction-to-Case (Drain) 1.0 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1 square PCB (FR-4 material). Document Number: 72849 www.vishay.com S-80272-Rev. B, 11-Feb-08 1SUM18N25-165 Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 250 (BR)DSS DS D V V V = V , I = 250 A Gate-Threshold Voltage 2.5 4 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 250 V, V = 0 V 1 DS GS I V = 250 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 250 V, V = 0 V, T = 175 C 250 DS GS J a I V 15 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 14 A 0.130 0.165 GS D a r V = 10 V, I = 14 A, T = 125 C 0.347 Drain-Source On-State Resistance DS(on) GS D J V = 10 V, I = 14 A, T = 175 C 0.462 GS D J a g V = 15 V, I = 18 A 36 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1950 iss C V = 0 V, V = 25 V, f = 1 MHz Output Capacitance 160 pF oss GS DS C Reverse Transfer Capacitance 70 rss c Q 30 45 Total Gate Charge g c Q V = 125 V, V = 10 V, I = 18 A 10 nC Gate-Source Charge gs DS GS D c Q 10 Gate-Drain Charge gd R Gate Resistance 1.6 g c t 15 25 Turn-On Delay Time d(on) c t V = 125 V, R = 7.0 130 195 Rise Time r DD L ns c I 18 A, V = 10 V, R = 2.5 t D GEN g 30 45 Turn-Off Delay Time d(off) c t 100 150 Fall Time f b Source-Drain Diode Ratings and Characteristics T = 25 C C I Continuous Current 18 S A I Pulsed Current 20 SM a V I = 18 A, V = 0 V 1.0 1.5 V Forward Voltage SD F GS t Reverse Recovery Time 115 175 ns rr I I = 18 A, di/dt = 100 A/s Peak Reverse Recovery Charge 10 15 A RM(REC) F Q Reverse Recovery Charge 0.58 1.3 C rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72849 2 S-80272-Rev. B, 11-Feb-08