SUD23N06-31L Vishay Siliconix N-Channel 60 V (D-S), 175 C MOSFET, Logic Level FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) r () I (A) DS DS(on) D 175 C Junction Temperature Available 0.031 at V = 10 V 23 GS RoHS* 60 0.045 at V = 4.5 V 19.5 COMPLIANT GS TO-252 D G Drain Connected to Tab GD S S Top View N-Channel MOSFET Ordering Information: SUD23N06-31L SUD23N06-31L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit Gate-Source Voltage V 20 V GS T = 25 C 23 C b I Continuous Drain Current (T = 175 C) D J T = 100 C 16.5 C I Pulsed Drain Current 50 A DM I Continuous Source Current (Diode Conduction) 23 S I Avalanche Current 20 AS E Single Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH 20 mJ AS T = 25 C 100 C P Maximum Power Dissipation W D a T = 25 C 3 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 sec 18 22 a R Maximum Junction-to-Ambient thJA Steady State 40 50 C/W R Maximum Junction-to-Case 3.2 4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board, t 10 sec. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72145 www.vishay.com S-71660-Rev. C, 06-Aug-07 1SUD23N06-31L Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min Max Unit Typ Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 (BR)DSS GS D V V V = V , I = 250 A Gate Threshold Voltage 1.0 2.0 3.0 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS I V = 60 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 60 V, V = 0 V, T = 175 C 250 DS GS J b I V = 5 V, V = 10 V 50 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.025 0.031 GS D V = 10 V, I = 15 A, T = 125 C 0.055 GS D J b r Drain-Source On-State Resistance DS(on) V = 10 V, I = 15 A, T = 175 C 0.069 GS D J V = 4.5 V, I = 10 A 0.037 0.045 GS D b g V = 15 V, I = 15 A 20 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 670 iss C V = 0 V, V = 25 V, f = 1 MHz Output Capacitance 140 pF oss GS DS C Reverse Transfer Capacitance 60 rss c Q 11 17 Total Gate Charge g c Q V = 30 V, V = 10 V, I = 23 A Gate-Source Charge 3 nC gs DS GS D c Q 3 Gate-Drain Charge gd c t Turn-On Delay Time 815 d(on) c t 15 25 Rise Time V = 30 V, R = 1.3 r DD L ns c I 23 A, V = 10 V, R = 2.5 t Turn-Off Delay Time D GEN g 30 45 d(off) c t 25 40 Fall Time f Source-Drain Diode Ratings and Characteristics (T = 25 C) C I A Pulsed Current 50 SM V I = 15 A, V = 0 V Diode Forward Voltage 1.0 1.5 V SD F GS t I = 15 A, di/dt = 100 A/s Reverse Recovery Time 30 60 ns rr F Notes: a. For design aid only not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72145 2 S-71660-Rev. C, 06-Aug-07