SUD10P06-280L Vishay Siliconix P-Channel 60-V (D-S), 175 C MOSFET, Logic Level FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs V (V) R ()I (A) DS DS(on) D 175 C Rated Maximum Junction Temperature 0.170 at V = - 10 V RoHS - 10 GS - 60 COMPLIANT 0.280 at V = - 4.5 V - 8 GS S TO-252 G Drain Connected to Tab GD S Top View D Ordering Information: SUD10P06-280L-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol LimitUnit Gate-Source Voltage V 20 V GS T = 25 C - 10 C Continuous Drain Current (T = 150 C) I J D T = 100 C - 7 C I Pulsed Drain Current - 20 A DM I Continuous Source Current (Diode Conduction) - 10 S I Avalanche Current - 10 AS E Single Pulse Avalanche Energy L = 0.1 mH 5mJ AS T = 25 C 37 C P Maximum Power Dissipation W D a T = 25 C 2 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit FR4 Board Mount 60 70 a R Junction-to-Ambient thJA Free Air 120 140 C/W R Junction-to-Case 3.7 4.0 thJC Notes: a. Surface Mounted on FR4 board. For SPICE model information via the Worldwide Web: SUD10P06-280L Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 60 DS DS D V V V = V , I = - 250 A Gate-Threshold Voltage - 1.0 - 2.0 - 3.0 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 60 V, V = 0 V - 1 DS GS I V = - 60 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current - 50 A DSS DS GS J V = - 60 V, V = 0 V, T = 175 C - 150 DS GS J b I V = - 5 V, V = - 10 V - 10 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 5 A 0.130 0.170 GS D V = - 10 V, I = - 5 A, T = 125 C 0.31 GS D J b R Drain-Source On-State Resistance DS(on) V = - 10 V, I = - 5 A, T = 175 C 0.375 GS D J V = - 4.5 V, I = - 2 A 0.210 0.280 GS D b g V = - 15 V, I = - 5 A 6S Forward Transconductance fs DS D Dynamic C Input Capacitance 635 iss Output Capacitance C V = - 25 V, V = 0 V, f = 1 MHz 100 pF oss DS GS C Reverse Transfer Capacitance 30 rss Total Gate Charge Q 11.5 25 g Q V = - 30 V, V = - 10 V, I = - 10 A Gate-Source Charge 3.5 nC gs DS GS D Gate-Drain Charge Q 2 gd c t 920 Turn-On Delay Time d(on) c t 16 20 Rise Time r V = - 30 V, R = 3 DD L ns c I 10 A, V = - 10 V, R = 2.5 t D GEN G 17 30 Turn-Off Delay Time d(off) c t 19 35 Fall Time f a Source-Drain Diode Ratings and Characteristics T = 25 C C Pulsed Current I - 20 A SM b V I = 10 A, V = 0 V Forward Voltage - 1.3 V SD F GS t I = 10 A, dI/dt = 100 A/s Reverse Recovery Time 50 80 ns rr F Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70780 2 S-81956-Rev. G, 25-Aug-08