Product Information

STY100NM60N

Name: STY100NM60N
Brand: STMicroelectronics
SKU: STY100NM60N_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STY100NM60N electronic component of STMicroelectronics

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Datasheet

MOSFET N-Ch 600V 0.025 Ohm 98A MDmesh II FET

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

30: USD 21.1583 ea
Line Total: USD 634.75

0 - Global Stock

MOQ: 30 Multiples: 30
Pack Size: 30

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 17 May to Thu. 23 May MOQ : 30 Multiples : 30 STY100NM60N STMicroelectronics	30 : USD 21.1583 60 : USD 20.193

0 - WHS 2 Ships to you between Thu. 23 May to Mon. 27 May MOQ : 1 Multiples : 1 STY100NM60N STMicroelectronics	1 : USD 29.1008

0 - WHS 3 Ships to you between Fri. 17 May to Thu. 23 May MOQ : 1 Multiples : 1 STY100NM60N STMicroelectronics	1 : USD 25.9463

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Additional Infomation About Product

STY100NM60N N-channel 600 V, 0.028 typ., 98 A MDmesh II Power MOSFET in a Max247 package Datasheet production data Features V DSS Type R max I DS(on) D T Jmax STY100NM60N 650 V < 0.029 98 A 100% avalanche tested 3 Low input capacitance and gate charge 2 1 Low gate input resistance Max247 Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order code Marking Package Packaging STY100NM60N 100NM60N Max247 Tube November 2012 Doc ID 022225 Rev 2 1/13 This is information on a product in full production. www.st.com 13Contents STY100NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 Doc ID 022225 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 74 A 74 A
Vds - Drain-Source Breakdown Voltage 600 V 600 V
Rds On - Drain-Source Resistance 29 mOhms 29 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 4 V 4 V
Pd - Power Dissipation 625 W 625 W
Mounting Style Through Hole Through Hole
Package / Case MAX247 MAX247
Packaging Tube Tube
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 25 V 25 V
Tradename Mdmesh Mdmesh
Configuration Single Single
Series Sty100nm60n Sty100nm60n
Brand Stmicroelectronics Stmicroelectronics
Continuous Drain Current 74 A 74 A
Drain-Source Breakdown Voltage 600 V 600 V
Gate-Source Breakdown Voltage 25 V 25 V
Power Dissipation 625 W 625 W
Rds On 29 Mohms 29 Mohms
Factory Pack Quantity : 30 30
Transistor Type 1 N - Channel 1 N - Channel
Cnhts 8541290000 8541290000
Hts Code 8541290075 8541290075
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000