X-On Electronics has gained recognition as a prominent supplier of STY100NM60N MOSFETs across the USA, India, Europe, Australia, and various other global locations. STY100NM60N MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STY100NM60N STMicroelectronics

Name: STY100NM60N
Brand: STMicroelectronics
SKU: STY100NM60N_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STY100NM60N electronic component of STMicroelectronics

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Part No.	STY100NM60N
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET N-Ch 600V 0.025 Ohm 98A MDmesh II FET
Datasheet:	STY100NM60N Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

30: USD 20.4866 ea
Line Total: USD 614.6

Availability - 0

MOQ: 30 Multiples: 30
Pack Size: 30

STY100NM60N More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 31 Dec to Mon. 06 Jan MOQ : 30 Multiples : 30	30 : USD 20.4866 60 : USD 19.552

0 Ship by Fri. 27 Dec to Tue. 31 Dec MOQ : 1 Multiples : 1	1 : USD 28.177

0 Ship by Tue. 31 Dec to Mon. 06 Jan MOQ : 1 Multiples : 1	1 : USD 25.1226

We are delighted to provide the STY100NM60N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STY100NM60N and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STY100NM60N N-channel 600 V, 0.028 typ., 98 A MDmesh II Power MOSFET in a Max247 package Datasheet production data Features V DSS Type R max I DS(on) D T Jmax STY100NM60N 650 V < 0.029 98 A 100% avalanche tested 3 Low input capacitance and gate charge 2 1 Low gate input resistance Max247 Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order code Marking Package Packaging STY100NM60N 100NM60N Max247 Tube November 2012 Doc ID 022225 Rev 2 1/13 This is information on a product in full production. www.st.com 13Contents STY100NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 Doc ID 022225 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 74 A 74 A
Vds - Drain-Source Breakdown Voltage 600 V 600 V
Rds On - Drain-Source Resistance 29 mOhms 29 mOhms
Transistor Polarity n - channel n - channel
Vgs th - Gate-Source Threshold Voltage 4 V 4 V
Pd - Power Dissipation 625 W 625 W
Mounting Style through hole through hole
Package / Case MAX247 MAX247
Packaging Tube Tube
Technology si si
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 25 V 25 V
Tradename mdmesh mdmesh
Configuration single single
Series sty100nm60n sty100nm60n
Brand Stmicroelectronics Stmicroelectronics
Continuous Drain Current 74 A 74 A
Drain-Source Breakdown Voltage 600 V 600 V
Gate-Source Breakdown Voltage 25 V 25 V
Power Dissipation 625 W 625 W
Rds On 29 mohms 29 mohms
Factory Pack Quantity : 30 30
Transistor Type 1 n - channel 1 n - channel
Cnhts 8541290000 8541290000
Hts Code 8541290075 8541290075
Mxhts 85412999 85412999
Product Type mosfet mosfet
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000