STY50N105DK5 Datasheet N-channel 1050 V, 110 m typ., 46 A MDmesh DK5 Power MOSFET in a Max247 package Features V R max. I P Order code DS DS(on) D TOT STY50N105DK5 1050 V 120 m 46 A 625 W Fast-recovery body diode Best R x area DS(on) 3 Low gate charge, input capacitance and resistance 2 1 100% avalanche tested Extremely high dv/dt ruggedness Max247 Applications D(2, TAB) Switching applications Description This very high voltage N-channel Power MOSFET is part of the MDmesh DK5 fast- G(1) recovery diode series. The MDmesh DK5 combines very low recovery charge (Q ) rr and recovery time (t ) with an excellent improvement in R * area and one of the rr DS(on) most effective switching behaviors, ideal for half bridge and full bridge converters. S(3) AM01475v1 noZen Product status link STY50N105DK5 Product summary Order code STY50N105DK5 Marking 50N105DK5 Package Max247 Packing Tube DS9462 - Rev 3 - August 2021 www.st.com For further information contact your local STMicroelectronics sales office.STY50N105DK5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS Drain current (continuous) at T = 25 C 46 C I A D Drain current (continuous) at T = 100 C 30 C (1) I Drain current (pulsed) 184 A DM P Total power dissipation at T = 25 C 625 W TOT C (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) MOSFET dv/dt ruggedness 50 V/ns dv/dt T Operating junction temperature range C J -55 to 150 T Storage temperature range C stg 1. Pulse width limited by safe operating area. 2. I 46 A, di/dt 400 A/s V (peak) V , V = 840 V. SD DS (BR)DSS DD 3. V 840 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.2 C/W thJC R Thermal resistance, junction-to-ambient 30 C/W thJA Table 3. Avalanche characteristics Symbol Parameter Value Unit I Single pulse avalanche energy (pulse width limited by T max.) 16 A AS J E Single pulse avalanche energy (starting T = 25C, I = I , V = 50 V) 1550 mJ AS J D AS DD DS9462 - Rev 3 page 2/12