SUD50N02-06P Vishay Siliconix N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () I (A) DS DS(on) 175 C Junction Temperature D 0.0060 at V = 10 V 26 PWM Optimized for High Efficiency GS 20 0.0095 at V = 4.5 V 21 100 % R Tested GS g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Synchronous Buck DC/DC Conversion TO-252 - Desktop - Server D Drain Connected to Tab GD S G Top View Ordering Information: SUD50N02-06P-E3 (Lead (Pb) free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 20 DS V Gate-Source Voltage V 20 GS a T = 25 C A 26 a I Continuous Drain Current D b T = 25 C 50 C I A Pulsed Drain Current 100 DM a I Continuous Source Current (Diode Conduction) 26 S I Avalanche Current 45 AS L = 0.1 mH Single Pulse Avalanche Energy E 101 mJ AS a T = 25 C 6.8 A P Maximum Power Dissipation W D T = 25 C 65 C T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s 18 22 a R Maximum Junction-to-Ambient thJA Steady State 40 50 C/W R Maximum Junction-to-Case 1.9 2.3 thJC Notes: a. Surface mounted on FR4 board, t 10 s. b. Limited by package. Document Number: 71931 www.vishay.com S11-2308-Rev. D, 21-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUD50N02-06P Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J a Parameter Symbol Test Conditions Min. Max. Unit Typ. Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 DS GS D V V V = V , I = 250 A Gate Threshold Voltage 0.8 3 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 125 C 50 DS GS J b I V = 5 V, V = 10 V On-State Drain Current 50 A D(on) DS GS V = 10 V, I = 20 A 0.0046 0.006 GS D b r V = 10 V, I = 20 A, T = 125 C 0.0084 Drain-Source On-State Resistance DS(on) GS D J V = 4.5 V, I = 20 A 0.0073 0.0095 GS D b g V = 15 V, I = 20 A 15 S Forward Transconductance fs DS D a Dynamic Input Capacitance C 2550 iss V = 0 V, V = 10 V, f = 1 MHz Output Capacitance C 900 pF GS DS oss Reverse Transfer Capacitance C 415 rss c Q 19 30 Total Gate Charge g c Q V = 10 V, V = 4.5 V, I = 50 A 7.5 nC Gate-Source Charge gs DS GS D c Q Gate-Drain Charge 6 gd R Gate Resistance 0.5 1.5 2.4 g c t Turn-On Delay Time 11 20 d(on) c t V = 10 V, R = 0.2 10 15 Rise Time r DD L ns c I 50 A, V = 10 V, R = 2.5 t 24 35 Turn-Off Delay Time D GEN G d(off) c t 915 Fall Time f Source-Drain Diode Ratings and Characteristic (T = 25 C) C Pulsed Current I 100 A SM b V I = 50 A, V = 0 V 1.2 1.5 V Diode Forward Voltage SD F GS Source-Drain Reverse Recovery Time t I = 50 A, dI/dt = 100 A/s 35 70 ns rr F Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C unless noted) 160 100 140 V = 10 thru 5 V GS 80 120 4 V 100 60 80 40 60 T = 125 C C 3 V 40 20 25 C 20 2 V - 55 C 0 0 0 2468 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71931 2 S11-2308-Rev. D, 21-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Drain Current (A) D I - Drain Current (A) D