SUA70090E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Q / Q ratio < 1 optimizes switching gd gs 0.0093 at V = 10 V 42.8 GS characteristics 100 33 nC 0.0100 at V = 7.5 V 33 GS 100 % R and UIS tested g Material categorization: Thin-Lead TO-220 FULLPAK for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS D Power supply - Secondary synchronous rectification DC/DC converter Power tools G S D G Motor drive switch DC/AC inverter Ordering Information: SUA70090E-E3 (lead (Pb)-free and halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 42.8 C Continuous Drain Current (T = 150 C) I J D T = 70 C 34.2 C A Pulsed Drain Current (t = 100 s) I 120 DM Avalanche Current I 40 AS a Single Avalanche Energy L = 0.1 mH E 80 mJ AS T = 25 C 35.7 C a Maximum Power Dissipation P W D T = 70 C 22.9 C Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT b Junction-to-Ambient (PCB Mount) R 60 thJA C/W Junction-to-Case (Drain) R 3.5 thJC Notes a. Duty cycle 1 %. b. When mounted on 1 square PCB (FR4 material). S16-0163-Rev. A, 01-Feb-16 Document Number: 65438 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SUA70090E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - DS GS D V Gate Threshold Voltage V V = V , I = 250 A 2 - 4 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = 100 V, V = 0 V - - 1 DS GS A Zero Gate Voltage Drain Current I V = 100 V, V = 0 V, T = 125 C - - 150 DSS DS GS J V = 100 V, V = 0 V, T = 175 C - - 5 mA DS GS J a On-State Drain Current I V 10 V, V = 10 V 50 - - A D(on) DS GS V = 10 V, I = 20 A - 0.0077 0.0093 GS D a Drain-Source On-State Resistance R DS(on) V = 7.5 V, I = 15 A - 0.0083 0.0100 GS D a Forward Transconductance g V = 15 V, I = 10 A - 38 - S fs DS D b Dynamic Input Capacitance C - 1950 - iss Output Capacitance C V = 0 V, V = 50 V, f = 1 MHz - 845 - pF oss GS DS Reverse Transfer Capacitance C -54- rss c Total Gate Charge Q -33 50 g c Gate-Source Charge Q V = 50 V, V = 10 V, I = 20 A -8.8 - nC gs DS GS D c Gate-Drain Charge Q -7.5- gd Gate Resistance R f = 1 MHz 0.7 3.5 7 g c Turn-On Delay Time t -15 30 d(on) c Rise Time t -27 54 r V = 50 V, R = 5 DD L ns I 10 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -3672 d(off) c Fall Time t -45 90 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Pulsed Current (t = 100 s) I -- 120 A SM a Forward Voltage V I = 10 A, V = 0 V - 0.8 1.5 V SD F GS Reverse Recovery Time t - 77 116 ns rr Peak Reverse Recovery Charge I I = -10 A, dI/dt = 100 A/s -4.2 6.3 A RM(REC) F Reverse Recovery Charge Q - 145 365 nC rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0163-Rev. A, 01-Feb-16 Document Number: 65438 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000