SUD06N10-225L-GE3 Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs V (V) R ()I (A) Q (Typ) DS DS(on) D g Material categorization: 0.200 at V = 10 V For definitions of compliance please see 6.5 GS 2.7 100 www.vishay.com/doc 99912 0.225 at V = 4.5 V 6 GS TO-252 D G Drain Connected to Tab S D G S Top View N-Channel MOSFET Order Number: SUD06N10-225L-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 100 DS V V Gate-Source Voltage 20 GS T = 25 C 6.5 C b I Continuous Drain Current (T = 150 C) D J T = 125 C 2.9 C I Pulsed Drain Current 8 A DM I Continuous Source Current (Diode Conduction) 6.5 S I Avalanche Current 5 AR Repetitive Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH E 1.25 mJ AR b T = 25 C 16.7 C Maximum Power Dissipation P W D a T = 25 C A 1.25 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 sec 40 50 a R Junction-to-Ambient thJA Steady State 80 100 C/W Junction-to-Case R 67.5 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. See SOA curve for voltage derating. Document Number: 62831 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S13-0193-Rev. A, 28-Jan-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUD06N10-225L-GE3 Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A a Parameter Symbol Test Conditions Min. Max. Unit. Typ. Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 DS GS D V V V = V , I = 250 A Gate Threshold Voltage 13 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 100 V, V = 0 V, T = 125 C 50 DS GS J b I V = 5 V, V = 10 V On-State Drain Current 8A D(on) DS GS V = 10 V, I = 3 A 0.160 0.200 GS D b R V = 10 V, I = 3 A, T = 125 C 0.350 Drain-Source On-State Resistance DS(on) GS D J V = 4.5 V, I = 1 A 0.180 0.225 GS D b g V = 15 V, I = 3 A Forward Transconductance 8.5 S fs DS D a Dynamic C Input Capacitance 240 iss C V = 0 V, V = 25 V, F = 1 MHz Output Capacitance 42 pF oss GS DS C Reverse Transfer Capacitance 17 rss c Q Total Gate Charge 2.7 4 g c Q V = 50 V, V = 5 V, I = 6.5 A 0.6 nC Gate-Source Charge gs DS GS D c Q 0.7 Gate-Drain Charge gd c t Turn-On Delay Time 711 d(on) c t 812 Rise Time V = 50 V, R = 7.5 r DD L ns c I 6.5 A, V = 10 V, R = 2.5 t Turn-Off Delay Time D GEN g 812 d(off) c t 914 Fall Time f Source-Drain Diode Ratings and Characteristics (T = 25 C) C Pulsed Current I 8A SM b V I = 6.5 A, V = 0 V Diode Forward Voltage 0.9 1.3 V SD F GS t I = 6.5 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 35 60 ns rr F Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 62831 For technical questions, contact: pmostechsupport vishay.com 2 S13-0193-Rev. A, 28-Jan-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000