SUD15N15-95 Vishay Siliconix N-Channel 150 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V (V) R ()I (A) DS DS(on) D 175 C Junction Temperature 0.095 at V = 10 V 15 GS 100 % R Tested g 150 0.100 at V = 6 V 15 GS Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Primary Side Switch TO-252 D Drain Connected to Tab G GD S Top View S Ordering Information: SUD15N15-95-E3 (Lead (Pb) free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C Parameter Symbol Limit Unit V Drain-Source Voltage 150 DS V Gate-Source Voltage V 20 GS T = 25 C 15 C b I Continuous Drain Current (T = 175 C) D J T = 125 C 8.7 C I Pulsed Drain Current 25 A DM Continuous Source Current (Diode Conduction) I 15 S I Avalanche Current 15 AR Repetitive Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH E 11.3 mJ AR b T = 25 C C 62 P Maximum Power Dissipation W D a T = 25 C A 2.7 T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s 16 20 a R Junction-to-Ambient thJA Steady State 45 55 C/W R Junction-to-Case 22.4 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. See SOA curve for voltage derating. Document Number: 71641 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S13-0104-Rev. D, 21-Jan-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUD15N15-95 Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J a Parameter Symbol Test Conditions Min. Max. Unit Typ. Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 150 DS GS D V V V = V , I = 250 A Gate Threshold Voltage 2 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 120 V, V = 0 V 1 DS GS I V = 120 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 120 V, V = 0 V, T = 175 C 250 DS GS J b I V = 5 V, V = 10 V 25 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.077 0.095 GS D V = 10 V, I = 15 A, T = 125 C 0.190 GS D J b R Drain-Source On-State Resistance DS(on) V = 10 V, I = 15 A, T = 175 C 0.250 GS D J V = 6 V, I = 10 A 0.081 0.100 GS D b g V = 15 V, I = 15 A 25 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 900 iss C V = 0 V, V = 25 V, f = 1 MHz Output Capacitance 115 pF oss GS DS C Reverse Transfer Capacitance 70 rss c Q 20 25 Total Gate Charge g c Q V = 75 V, V = 10 V, I = 15 A Gate-Source Charge 5.5 nC gs DS GS D c Q 7 Gate-Drain Charge gd R Gate Resistance 13.2 g c t 812 Turn-On Delay Time d(on) c t Rise Time V = 75 V, R = 5 35 55 r DD L ns c 15 A, V = 10 V, R = 2.5 I t 17 25 Turn-Off Delay Time d(off) D GEN G c t Fall Time 30 45 f Source-Drain Diode Ratings and Characteristic (T = 25 C) C I A Pulsed Current 25 SM b V I = 15 A, V = 0 V Diode Forward Voltage 0.9 1.5 V SD F GS t I = 15 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 55 85 ns rr F Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71641 For technical questions, contact: pmostechsupport vishay.com 2 S13-0104-Rev. D, 21-Jan-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000