SUD20N10-66L Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () Max. I (A) Q (Typ.) 100 % R and UIS Tested DS DS(on) D g g Material categorization: 0.066 at V = 10 V 18.2 GS 100 19.8 For definitions of compliance please see 0.080 at V = 4.5 V 13.2 GS www.vishay.com/doc 99912 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Motor Drives G Drain Connected to Tab D G S S Top View N-Channel MOSFET Ordering Information: SUD20N10-66L-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 16.9 C Continuous Drain Current I D T = 70 C 13.6 C A Pulsed Drain Current (t = 300 s) I 25 DM Avalanche Current I 15 AS a Single Avalanche Energy L = 0.1 mH E 11.25 mJ AS b T = 25 C 41.7 C a Maximum Power Dissipation P W D c T = 25 C 2.1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c Junction-to-Ambient (PCB Mount) R 60 thJA C/W Junction-to-Case (Drain) R 3 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR-4 material). d. Base on T = 25 C. C Document Number: 62815 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-0629-Rev. A, 25-Mar-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUD20N10-66L Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 DS GS D V Gate Threshold Voltage V V = V , I = 250 A 1.2 3 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 250 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I V = 100 V, V = 0 V, T = 125 C 50 A DSS DS GS J = 100 V, V = 0 V, T = 150 C 250 V DS GS J a On-State Drain Current I V 10 V, V = 10 V 20 A D(on) DS GS V = 10 V, I = 6.6 A 0.055 0.066 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 6 A 0.066 0.080 GS D a Forward Transconductance g V = 15 V, I = 6.6 A 25 S fs DS D b Dynamic Input Capacitance C 860 iss Output Capacitance C V = 50 V, V = 0 V, f = 1 MHz 85 pF oss DS GS Reverse Transfer Capacitance C 40 rss c Total Gate Charge Q 19.8 30 g c Gate-Source Charge Q V = 50 V, V = 10 V, I = 6.6 A 3.6 nC gs DS GS D c Gate-Drain Charge Q 4.1 gd Gate Resistance R f = 1 MHz 0.4 2 4 g c Turn-On Delay Time t 816 d(on) c Rise Time t 11 20 r V = 50 V, R = 9.6 DD L c I 5.2 A, V = 10 V, R = 1 Turn-Off Delay Time t 18D GEN g 27 d(off) c Fall Time t 510 f ns c Turn-On Delay Time t 38 57 d(on) c Rise Time t 58 87 r V = 50 V, R = 9.6 DD L c I 5.2 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 18D GEN g 27 d(off) c Fall Time t 816 f b Drain-Source Body Diode Ratings and Characteristics T = 25 C C Continuous Current I 16.9 S A Pulsed Current I 25 SM a Forward Voltage V I = 5.2 A, V = 0 V 0.8 1.5 V SD F GS Reverse Recovery Time t 34 51 ns rr Peak Reverse Recovery Current I I = 5.2 A, dI/dt = 100 A/s 35 A RM(REC) F Reverse Recovery Charge Q 50 75 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 62815 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-0629-Rev. A, 25-Mar-13 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000