New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a, c V (V) R () Q (Typ.) I (A) DS DS(on) g D 100 % R and UIS Tested g RoHS 0.0021 at V = 10 V 110 GS COMPLIANT 40 240 nC 0.0024 at V = 4.5 V 110 GS APPLICATIONS Synchronous Rectification Power Supplies D T O-263 G G D S T op V i e w S N-Channel MOSFET Ordering Information: SUM110N04-2m1P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 40 DS V V Gate-Source Voltage 20 GS a, c T = 25 C C 110 c T = 70 C C 110 Continuous Drain Current (T = 175 C) I J D b T = 25 C A 29 A b T = 70 C 23 A I Pulsed Drain Current 250 DM I Avalanche Current Pulse 80 AS L = 0.1 mH E Single Pulse Avalanche Energy 320 V AS a, c T = 25 C C 110 I Continuous Source-Drain Diode Current A S b T = 25 C A 2.6 a T = 25 C C 312 T = 70 C 200 C Maximum Power Dissipation P W D b T = 25 C A 3.13 b T = 70 C A 2.0 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b Steady State R Maximum Junction-to-Ambient 32 40 thJA C/W R Maximum Junction-to-Case Steady State 0.33 0.4 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. Calculated based on maximum junction temperature. Package limitation current is 110 A. Document Number: 69983 www.vishay.com S-80680-Rev. A, 31-Mar-08 1New Product SUM110N04-2m1P Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 V DS GS D V Temperature Coefficient V /T 41 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 8 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V On-State Drain Current 120 A D(on) DS GS V = 10 V, I = 30 A 0.0017 0.0021 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 20 A 0.002 0.0024 GS D a g V = 15 V, I = 30 A 180 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 18800 iss Output Capacitance C V = 20 V, V = 0 V, f = 1 MHz 1550 pF oss DS GS C Reverse Transfer Capacitance 850 rss Total Gate Charge Q 240 360 g Q V = 20 V, V = 10 V, I = 20 A Gate-Source Charge 40 nC gs DS GS D Gate-Drain Charge Q 22 gd R Gate Resistance f = 1 MHz 0.85 1.3 g t Turn-On Delay Time 20 30 d(on) t Rise Time V = 20 V, R = 1.0 11 17 r DD L I 20 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 77 115 d(off) t Fall Time 10 15 f ns t Turn-On Delay Time 102 155 d(on) t Rise Time V = 20 V, R = 1.0 62 95 r DD L I 20 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 180 270 d(off) Fall Time t 60 90 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 110 S C A a I 200 Pulse Diode Forward Current SM V I = 20 A Body Diode Voltage 0.8 1.2 V SD S Body Diode Reverse Recovery Time t 50 75 ns rr Q Body Diode Reverse Recovery Charge 70 105 nC rr I = 20 A, di/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 30 a ns t Reverse Recovery Rise Time 20 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69983 2 S-80680-Rev. A, 31-Mar-08