SUM110N10-09 Vishay Siliconix N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) DS DS(on) D New Package with Low Thermal Resistance a 100 0.0095 at V = 10 V 110 GS 100 % R Tested g D TO-263 G G D S Top View S Ordering Information: SUM110N10-09-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS a T = 25 C 110 C Continuous Drain Current (T = 175 C) I J D a T = 125 C 87 C A Pulsed Drain Current I 440 DM Avalanche Current I 75 AR b Repetitive Avalanche Energy L = 0.1 mH E 280 mJ AR c T = 25 C 375 C b Maximum Power Dissipation P W D T = 25 C 3.75 A Operating Junction and Storage Temperature Range T , T - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit d Junction-to-Ambient PCB Mount (TO-263) R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes: a. Package limited. b. Duty cycle 1 %. c. See SOA curve for voltage derating. d. When mounted on 1 square PCB (FR-4 material). Document Number: 70677 www.vishay.com S10-0644-Rev. G, 22-Mar-10 1SUM110N10-09 Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 DS DS D V Gate-Threshold Voltage V V = V , I = 250 A 2 4 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I V = 100 V, V = 0 V, T = 125 C 50 A DSS DS GS J = 100 V, V = 0 V, T = 175 C 250 V DS GS J a On-State Drain Current I V 5 V, V = 10 V 120 A D(on) DS GS V = 10 V, I = 30 A 0.0078 0.0095 GS D a Drain-Source On-State Resistance R V = 10 V, I = 30 A, T = 125 C 0.017 DS(on) GS D J V = 10 V, I = 30 A, T = 175 C 0.025 GS D J a Forward Transconductance g V = 15 V, I = 30 A 25 S fs DS D b Dynamic Input Capacitance C 6700 iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz 750 pF oss GS DS Reverse Transfer Capacitance C 280 rss c Total Gate Charge Q 110 160 g c Gate-Source Charge Q V = 50 V, V = 10 V, I = 85 A 24 nC gs DS GS D c Gate-Drain Charge Q 24 gd Gate Resistance R 1.0 6.2 g c Turn-On Delay Time t 20 30 d(on) c Rise Time t 125 200 V = 50 V, R = 0.6 r DD L ns c I 85 A, V = 10 V, R = 2.5 Turn-Off Delay Time t 55D GEN g 85 d(off) c Fall Time t 130 195 f b Source-Drain Diode Ratings and Characteristics T = 25 C C Continuous Current I 110 S A Pulsed Current I 240 SM a Forward Voltage V I = 85 A, V = 0 V 1.0 1.5 V SD F GS Reverse Recovery Time t 70 140 ns rr Peak Reverse Recovery Charge I I = 50 A, dI/dt = 100 A/s 5.5 10 A RM(REC) F Reverse Recovery Charge Q 0.19 0.35 C rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70677 2 S10-0644-Rev. G, 22-Mar-10