X-On Electronics has gained recognition as a prominent supplier of SUM110N10-09-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SUM110N10-09-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SUM110N10-09-E3 Vishay

SUM110N10-09-E3 electronic component of Vishay
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Part No.SUM110N10-09-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 100V 110A 375W
Datasheet: SUM110N10-09-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.96 ea
Line Total: USD 3.96 
Availability - 1551
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
776
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 800
Multiples : 800
800 : USD 2.314
1600 : USD 2.314
2400 : USD 2.314

1551
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 3.96
10 : USD 3.113
100 : USD 2.343
800 : USD 2.244
2400 : USD 2.2
4800 : USD 2.189

560
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 4.942
5 : USD 4.466
6 : USD 3.402
14 : USD 3.22

776
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 800
Multiples : 800
800 : USD 3.644

1552
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 800
Multiples : 800
800 : USD 2.3309
2400 : USD 2.3081
4800 : USD 2.2856

2328
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 800
Multiples : 800
800 : USD 2.7911

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SUM110N10-09-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUM110N10-09-E3 and other electronic components in the MOSFETs category and beyond.

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SUM110N10-09 Vishay Siliconix N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) DS DS(on) D New Package with Low Thermal Resistance a 100 0.0095 at V = 10 V 110 GS 100 % R Tested g D TO-263 G G D S Top View S Ordering Information: SUM110N10-09-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS a T = 25 C 110 C Continuous Drain Current (T = 175 C) I J D a T = 125 C 87 C A Pulsed Drain Current I 440 DM Avalanche Current I 75 AR b Repetitive Avalanche Energy L = 0.1 mH E 280 mJ AR c T = 25 C 375 C b Maximum Power Dissipation P W D T = 25 C 3.75 A Operating Junction and Storage Temperature Range T , T - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit d Junction-to-Ambient PCB Mount (TO-263) R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes: a. Package limited. b. Duty cycle 1 %. c. See SOA curve for voltage derating. d. When mounted on 1 square PCB (FR-4 material). Document Number: 70677 www.vishay.com S10-0644-Rev. G, 22-Mar-10 1SUM110N10-09 Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 DS DS D V Gate-Threshold Voltage V V = V , I = 250 A 2 4 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I V = 100 V, V = 0 V, T = 125 C 50 A DSS DS GS J = 100 V, V = 0 V, T = 175 C 250 V DS GS J a On-State Drain Current I V 5 V, V = 10 V 120 A D(on) DS GS V = 10 V, I = 30 A 0.0078 0.0095 GS D a Drain-Source On-State Resistance R V = 10 V, I = 30 A, T = 125 C 0.017 DS(on) GS D J V = 10 V, I = 30 A, T = 175 C 0.025 GS D J a Forward Transconductance g V = 15 V, I = 30 A 25 S fs DS D b Dynamic Input Capacitance C 6700 iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz 750 pF oss GS DS Reverse Transfer Capacitance C 280 rss c Total Gate Charge Q 110 160 g c Gate-Source Charge Q V = 50 V, V = 10 V, I = 85 A 24 nC gs DS GS D c Gate-Drain Charge Q 24 gd Gate Resistance R 1.0 6.2 g c Turn-On Delay Time t 20 30 d(on) c Rise Time t 125 200 V = 50 V, R = 0.6 r DD L ns c I 85 A, V = 10 V, R = 2.5 Turn-Off Delay Time t 55D GEN g 85 d(off) c Fall Time t 130 195 f b Source-Drain Diode Ratings and Characteristics T = 25 C C Continuous Current I 110 S A Pulsed Current I 240 SM a Forward Voltage V I = 85 A, V = 0 V 1.0 1.5 V SD F GS Reverse Recovery Time t 70 140 ns rr Peak Reverse Recovery Charge I I = 50 A, dI/dt = 100 A/s 5.5 10 A RM(REC) F Reverse Recovery Charge Q 0.19 0.35 C rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70677 2 S10-0644-Rev. G, 22-Mar-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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