SUD50P10-43L Vishay Siliconix P-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Q (Typ.) I (A) DS DS(on) g D Compliant to RoHS Directive 2002/95/EC RoHS 0.043 at V = - 10 V - 37 GS COMPLIANT - 100 54 nC 0.048 at V = - 4.5 V - 35 GS TO-252 S G Drain Connected to Tab GD S Top View D Ordering Information: SUD50P10-43L-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 100 DS V V Gate-Source Voltage 20 GS a T = 25 C - 37.1 C a T = 125 C C - 31 b I Continuous Drain Current (T = 175 C) D J b, c T = 25 C A - 9.2 b, c T = 125 C A - 7.7 A I Pulsed Drain Current - 40 DM a T = 25 C - 50 C Continuous Source Current (Diode Conduction) I S b, c T = 25 C A - 6.9 Avalanche Current I - 35 AS L = 0.1 mH E Single Pulse Avalanche Energy 61 mJ AS T = 25 C 136 C T = 70 C 95 C P Maximum Power Dissipation W D b, c T = 25 C A 8.3 b, c T = 70 C A 5.8 Operating Junction and Storage Temperature Range T , T - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s 15 18 a R Junction-to-Ambient thJA Steady State 40 50 C/W Junction-to-Case (Drain) R 0.85 1.1 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 40 C/W. Document Number: 73444 www.vishay.com S09-1398-Rev. C, 20-Jul-09 1SUD50P10-43L Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 100 V DS GS D V Temperature Coefficient V /T - 109 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.9 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 100 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 100 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = - 10 V - 40 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 9.2 A 0.036 0.043 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 7.7 A 0.040 0.048 GS D a g V = - 15 V, I = - 9.2 A Forward Transconductance 38 S fs DS D b Dynamic Input Capacitance C 4600 iss C V = - 50 V, V = 0 V, f = 1 MHz Output Capacitance 230 pF oss DS GS Reverse Transfer Capacitance C 175 rss V = - 50 V, V = - 10 V, I = - 9.2 A 106 160 DS GS D Q Total Gate Charge g 54 81 nC Gate-Source Charge Q V = - 50 V, V = - 4.5 V, I = - 9.2 A 14 gs DS GS D Q Gate-Drain Charge 26 gd Gate Resistance R f = 1 MHz 4 g t Turn-On Delay Time 15 25 d(on) t Rise Time V = - 50 V, R = 6.5 20 30 r DD L ns I - 7.7 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 110 165 d(off) t Fall Time 100 150 f t Turn-On Delay Time 42 65 d(on) t Rise Time V = - 50 V, R = 6.5 160 240 r DD L ns I - 7.7 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 100 150 d(off) t Fall Time 100 150 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 50 S C A a I Pulse Diode Forward Current - 40 SM Body Diode Voltage V I = - 7.7 A - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 60 90 ns rr Body Diode Reverse Recovery Charge Q 150 225 nC rr I = - 7.7 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 46 a ns Reverse Recovery Rise Time t 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73444 2 S09-1398-Rev. C, 20-Jul-09