New Product SUD50P04-13L Vishay Siliconix P-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ( )I (A) DS DS(on) D 175 C Junction Temperature a 0.013 at V = - 10 V - 60 GS RoHS - 40 COMPLIANT 0.022 at V = - 4.5 V - 48 GS S TO-252 G Drain Connected to Tab GD S Top View D Ordering Information: SUD50P04-13L-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 40 DS V Gate-Source Voltage V 20 GS c T = 25 C - 60 C b I Continuous Drain Current D T = 100 C - 43 C I Pulsed Drain Current - 100 DM c Continuous Source Current (Diode Conduction) I - 60 S I Avalanche Current - 40 AS L = 0.1 mH E 80 mJ Avalanche Energy, AS b T = 25 C C 93.7 b P W Maximum Power Dissipation D a T = 25 C A 3 T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 sec 15 18 a R Maximum Junction-to-Ambient thJA Steady State 40 50 C/W R Maximum Junction-to-Case (Drain) 1.3 1.8 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See SOA curve for voltage derating. b. Calculated based on maximum allowed Junction Temperature. Package limitation current is 50 A. Document Number: 73009 www.vishay.com S-71660-Rev. B, 06-Aug-07 1New Product SUD50P04-13L Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min TypMaxUnit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 40 (BR)DSS GS D V V V = V , I = - 250 A Gate-Source Threshold Voltage - 1.0 - 3.0 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 40 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 40 V, V = 0 V, T = 125 C - 50 DS GS J a I V = - 5 V, V = - 10 V On-State Drain Current - 50 A D(on) DS GS V = - 10 V, I = - 30 A 0.0105 0.013 GS D a r V = - 10 V, I = - 30 A, T = 125 C 0.020 Drain-Source On-State Resistance DS(on) GS D J V = - 4.5 V, I = - 20 A 0.017 0.022 GS D a g V = - 15 V, I = - 30 A 15 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 3120 iss Output Capacitance C V = - 25 V, V = 0 V, f = 1 MHz 440 pF oss DS GS C Reverse Transfer Capacitance 320 rss Gate Resistance R f = 1 MHz 4.3 g c Q 63 95 Total Gate Charge g c Q V = - 20 V, V = - 10 V, I = - 50 A 13 nC Gate-Source Charge gs DS GS D c Q 16 Gate-Drain Charge gd c t 15 25 Turn-On Delay Time d(on) c t 18 30 Rise Time r V = - 20 V, R = 0.4 DD L ns c I - 50 A, V = - 10 V, R = 2.5 t D GEN g 60 90 Turn-Off Delay Time d(off) c t 47 70 Fall Time f Drain-Source Body Diode Characteristics Pulse Current I - 100 SM a V I = - 50 A, V = 0 V Forward Voltage - 1.0 - 1.5 V SD F GS t I = - 50 A, di/dT = 100 A/s Source-Drain Reverse Recovery Time 36 55 ns rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73009 2 S-71660-Rev. B, 06-Aug-07