X-On Electronics has gained recognition as a prominent supplier of SUD90330E-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SUD90330E-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SUD90330E-GE3 Vishay

SUD90330E-GE3 electronic component of Vishay
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Part No.SUD90330E-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 200V Vds 20V Vgs TO-252
Datasheet: SUD90330E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.9418 ea
Line Total: USD 1883.6 
Availability - 0
MOQ: 2000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 2000
Multiples : 1
2000 : USD 0.9418
2500 : USD 0.9324
3000 : USD 0.9231
4000 : USD 0.9139
5000 : USD 0.9047
10000 : USD 0.8957
20000 : USD 0.8867
25000 : USD 0.8779
50000 : USD 0.869

0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 3.7931
10 : USD 1.3913
100 : USD 1.0899
250 : USD 1.06
500 : USD 0.8943
1000 : USD 0.7886
2000 : USD 0.7639

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SUD90330E-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUD90330E-GE3 and other electronic components in the MOSFETs category and beyond.

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SUD90330E www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) 175 C MOSFET FEATURES TO-252TO ThunderFET power MOSFET Low R - Q figure-of-merit (FOM) DS g Drain connected to tab Maximum 175 C junction temperature 100 % R and UIS tested g Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S D APPLICATIONS G D Top View Synchronous rectification Power supplies PRODUCT SUMMARY DC/AC inverter V (V) 200 DS G DC/DC converter R max. ( ) at V = 10 V 0.0375 DS(on) GS Solar micro inverter R max. ( ) at V = 7.5 V 0.0422 DS(on) GS Motor drive switch Q typ. (nC) 21 g S I (A) 35.1 D N-Channel MOSFET Configuration Single ORDERING INFORMATION Package TO-252 Lead (Pb)-free and halogen-free SUD90330E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 200 DS V Gate-source voltage V 20 GS T = 25 C 35.8 C Continuous drain current I D T = 125 C 20.7 C Pulsed drain current (t = 100 s) I 70 A DM Continuous source-drain diode current I 12.5 S a Single pulse avalanche current I 33 AS L = 0.1 mH a Single pulse avalanche energy E 54.45 mJ AS b T = 25 C 125 C Maximum power dissipation P W D b T = 125 C 41.7 C Operating junction and storage temperature range T , T -55 to +175 J stg C c Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MAXIMUM UNIT c Maximum junction-to-ambient (PCB mount) R 40 thJA C/W Maximum junction-to-case (drain) Steady state R 1.2 thJC Notes a. Duty cycle 1 % b. See SOA curve for voltage derating c. When mounted on 1 square PCB (FR4 material) S17-0649-Rev. A, 01-May-17 Document Number: 74527 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUD90330E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 200 - - V DS GS D Gate-source threshold voltage V V = V , I = 250 A 2 - 4 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = 200 V, V = 0 V - - 1 DS GS A Zero gate voltage drain current I V = 200 V, V = 0 V, T = 125 C - - 150 DSS DS GS J V = 200 V, V = 0 V, T = 175 C - - 5 mA DS GS J a On-state drain current I V 10 V, V = 10 V 20 - - A D(on) DS GS V = 10 V, I = 12.2 A - 0.0312 0.0375 GS D a Drain-source on-state resistance R DS(on) V = 7.5 V, I = 11.5 A - 0.0337 0.0422 GS D a Forward transconductance g V = 15 V, I = 10 A - 28 - S fs DS D b Dynamic Input capacitance C - 1172 - iss Output capacitance C V = 100 V, V = 0 V, f = 1 MHz - 150 - pF oss DS GS Reverse transfer capacitance C -11 - rss Total gate charge Q -21 32 g Gate-source charge Q V = 100 V, V =10 V, I = 12.2 A -6 - nC gs DS GS D Gate-drain charge Q -5.3 - gd Gate resistance R f = 1 MHz 0.76 3.8 7.6 g Turn-on delay time t -12 24 d(on) Rise time t -25 50 V = 100 V, R = 14.2 , I 7 A, r DD L D ns V = 10 V, R = 1 Turn-off delay time t GEN g -30 50 d(off) Fall time t -22 44 f Drain-Source Body Diode Characteristics Pulse diode forward current (t = 100 s) I -- 70 A SM Body diode voltage V I = 7 A, V = 0 V - 0.8 1.5 V SD F GS Body diode reverse recovery time t - 111 170 ns rr Body diode reverse recovery charge Q -0.51 1 C rr I = 7 A, di/dt = 100 A/s F Reverse recovery fall time t -94 - a ns Reverse recovery rise time t -17 - b Body diode peak reverse recovery charge I -8.5 17 A RM(REC) Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0649-Rev. A, 01-May-17 Document Number: 74527 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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