DMN33D8LT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
N-Channel MOSFET
I
D
V R
(BR)DSS DS(ON)
T = +25C
A Low On-Resistance
5 @ V = 4V 200 mA
GS
Low Input Capacitance
30V
7 @ V = 2.5V 115 mA
GS
Fast Switching Speed
Small Surface Mount Package
Description ESD Protected Gate 2KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
This new generation MOSFET has been designed to minimize the
Halogen and Antimony Free. Green Device (Note 3)
on-state resistance (R ) and yet maintain superior switching
DS(ON)
Qualified to AEC-Q101 Standards for High Reliability
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Applications Case: SOT523
Case Material: Molded Plastic. Green Molding Compound.
DC-DC Converters
UL Flammability Classification Rating 94V-0
Power Management Functions
Moisture Sensitivity: Level 1 per J-STD-020
Battery Operated Systems and Solid-State Relays
Terminals: Matte Tin Finish Annealed Over Alloy 42 Leadframe
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
e3
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Memories, Transistors, etc
Terminal Connections: See Diagram
Weight: 0.002 grams (approximate)
Drain
SOT523
D
Gate
GS
ESD PROTECTED
Gate
Protection
Source
Top View
Diode
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMN33D8LT-7 SOT523 3,000/Tape & Reel
DMN33D8LT-13 SOT523 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN33D8LT
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 30 V
DSS
Gain-Source Voltage V 20 V
GSS
Drain Current (Note 5) Continuous I 115 mA
D
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 240 mW
P
D
Thermal Resistance, Junction to Ambient(Note 5) R 521 C /W
JA
Total Power Dissipation (Note 6) P 300 mW
D
Thermal Resistance, Junction to Ambient(Note 6) 420 C /W
R
JA
Operating and Storage Temperature Range -55 to +150 C
T , T
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic SymbolMin Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 1.0 A V = 30V, V = 0V
DSS DS GS
Gate-Body Leakage I 10 A V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 0.8 1.5 V V = 3V, I = 100A
GS(th) DS D
5 V = 4V, I = 10mA
GS D
Static Drain-Source On-Resistance
R
DS (ON)
7 V = 2.5V, I = 5mA
GS D
Diode Forward Voltage V 1.2 V V = 0V, I = 115mA
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance 48
C
iss
Output Capacitance 11 pF
C V = 5V, V = 0V, f = 1.0MHz
oss DS GS
Reverse Transfer Capacitance 8
C
rss
0.55
Total Gate Charge V = 10V Q
GS g
Total Gate Charge V = 4.5V Q 1.23
GS g V = 10V, V = 10V,
GS DS
nC
I = 250mA
Gate-Source Charge Q 0.14 D
gs
Gate-Drain Charge Q 0.14
gd
Turn-On Delay Time t 2.9
D(on)
Turn-On Rise Time t 2.6
r
V = 30V, I = 0.2A, V = 10V
DD D GEN ,
nS
R = 25
Turn-Off Delay Time t 18.2 GEN
D(off)
Turn-Off Fall Time 13.6
t
f
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 5 July 2014
DMN33D8LT
Diodes Incorporated
www.diodes.com
Document number: DS37091 Rev. 2 - 2
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