SUM09N20-270 Vishay Siliconix N-Channel 200 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V (V) R ()I (A) DS DS(on) D 175 C Junction Temperature 0.270 at V = 10 V 9 GS Low Thermal Resistance Package 200 0.300 at V = 6 V 8.5 GS Compliant to RoHS Directive 2002/95/EC D TO-263 G G D S Top View S Ordering Information: SUM09N20-270-E3 (Lead (Pb) free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C Parameter Symbol Limit Unit V Drain-Source Voltage 200 DS V Gate-Source Voltage V 20 GS T = 25 C 9 C Continuous Drain Current (T = 175 C) I J D T = 125 C 5.2 C A I Pulsed Drain Current 10 DM Avalanche Current I 7 AR a L = 0.1 mH E Repetitive Avalanche Energy 2.45 mJ AR b T = 25 C C 60 a P W Maximum Power Dissipation D c 3.75 T = 25 C A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R 40 Junction-to-Ambient (PCB Mount) thJA C/W Junction-to-Case (Drain) R 2.5 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR-4 material). Document Number: 72158 www.vishay.com S11-2308-Rev. B, 21-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUM09N20-270 Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 200 DS DS D V V V = V , I = 250 A Gate-Threshold Voltage 24 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 160 V, V = 0 V 1 DS GS I V = 160 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 160 V, V = 0 V, T = 175 C 250 DS GS J a I V 5 V, V = 10 V 10 A On-State Drain Current D(on) DS GS V = 10 V, I = 5 A 0.216 0.270 GS D V = 10 V, I = 5 A, T = 125 C 0.54 GS D J a R Drain-Source On-State Resistance DS(on) V = 10 V, I = 5 A, T = 175 C 0.71 GS D J V = 6 V, I = 5 A 0.240 0.300 GS D a g V = 15 V, I = 5 A 15 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 580 iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz 75 pF oss GS DS C Reverse Transfer Capacitance 30 rss c Q 11 17 Total Gate Charge g c Q V = 100 V, V = 10 V, I = 10 A Gate-Source Charge 2.7 nC gs DS GS D c Q 4 Gate-Drain Charge gd R Gate Resistance 4 G c t 10 15 Turn-On Delay Time d(on) c t Rise Time V = 100 V, R = 10 35 55 r DD L ns c I 10 A, V = 10 V, R = 2.5 t D GEN G 25 40 Turn-Off Delay Time d(off) c t Fall Time 40 60 f b Source-Drain Diode Ratings and Characteristics (T = 25 C) C I Continuous Current 9 S A Pulsed Current I 10 SM a V I = 10 A, V = 0 V 0.9 1.5 V Forward Voltage SD F GS Reverse Recovery Time t 100 150 ns rr I I = 10 A, dI/dt = 100 A/s Peak Reverse Recovery Charge 58 A RM(REC) F Reverse Recovery Charge Q 0.25 0.6 C rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72158 2 S11-2308-Rev. B, 21-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000