SUD42N03-3m9P Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition d 0.0039 at V = 10 V 107 GS TrenchFET Power MOSFET 30 67 d 0.0045 at V = 4.5 V 103 GS 100 % R and UIS Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converters - Synchronous Buck Low Side TO-252 D G Drain Connected to Tab GD S Top View S Ordering Information: SUD42N03-3m9P-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS d T = 25 C (Silicon Limited) 107 C d Continuous Drain Current T = 70 C (Silicon Limited) I 85 C D T = 25 C (Package Limited) 42 A C Pulsed Drain Current (t = 300 s) I 120 DM Avalanche Current I 45 AS a Single Avalanche Energy L = 0.1 mH E 101 mJ AS b T = 25 C 73.5 C a Maximum Power Dissipation P W D c T = 25 C 2.5 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c Junction-to-Ambient (PCB Mount) R 50 thJA C/W Junction-to-Case (Drain) R 1.7 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR-4 material). d. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42 A. Document Number: 66824 www.vishay.com S10-2006-Rev. A, 06-Sep-10 1SUD42N03-3m9P Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 DS DS D V Gate Threshold Voltage V V = V , I = 250 A 1 2.5 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 250 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I V = 30 V, V = 0 V, T = 125 C 50 A DSS DS GS J = 30 V, V = 0 V, T = 150 C 250 V DS GS J a On-State Drain Current I V 10 V, V = 10 V 50 A D(on) DS GS V = 10 V, I = 22 A 0.0032 0.0039 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 20 A 0.0037 0.0045 GS D a Forward Transconductance g V = 15 V, I = 20 A 110 S fs DS D b Dynamic Input Capacitance C 3535 iss Output Capacitance C V = 0 V, V = 15 V, f = 1 MHz 680 pF oss GS DS Reverse Transfer Capacitance C 400 rss c Total Gate Charge Q 67 100 g c Gate-Source Charge Q V = 15 V, V = 10 V, I = 20 A 10.5 nC gs DS GS D c Gate-Drain Charge Q 12.2 gd Gate Resistance R f = 1 MHz 0.3 1.4 2.8 g c Turn-On Delay Time t 11 20 d(on) c Rise Time t 10 20 r V = 15 V, R = 1.5 DD L ns c I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 35D GEN g 53 d(off) c Fall Time t 10 20 f b Drain-Source Body Diode Ratings and Characteristics T = 25 C C Continuous Current I 42 S A Pulsed Current I 120 SM a Forward Voltage V I = 10 A, V = 0 V 0.83 1.5 V SD F GS Reverse Recovery Time t 41 62 ns rr Peak Reverse Recovery Current I I = 10 A, dI/dt = 100 A/s 23 A RM(REC) F Reverse Recovery Charge Q 40 60 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66824 2 S10-2006-Rev. A, 06-Sep-10