SUD45P04-16P Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( ) Max. I (A) Q (Typ.) Definition DS DS(on) D g TrenchFET Power MOSFET 0.0162 at V = - 10 V GS - 36 - 40 67 100 % R and UIS Tested g 0.0230 at V = - 4.5 V - 24 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-252 Power Switch Load Switch in High Current Applications DC/DC Converters S Drain Connected to Tab GD S G Top View Ordering Information: SUD45P04-16P-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C Parameter Symbol Limit Unit V Drain-Source Voltage - 40 DS V Gate-Source Voltage V 20 GS T = 25 C C - 36 Continuous Drain Current (T = 150 C) I J D T = 70 C - 29 C A Pulsed Drain Current (t = 300 s) I - 100 DM I Avalanche Current - 32 AS a L = 0.1 mH E 51 mJ Single Avalanche Energy AS b T = 25 C C 41.7 a P W Maximum Power Dissipation D c T = 25 C 2.1 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R Junction-to-Ambient (PCB Mount) 60 thJA C/W R Junction-to-Case (Drain) 3 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR-4 material). Document Number: 63372 www.vishay.com S11-1657-Rev. A, 15-Aug-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUD45P04-16P Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 40 DS DS D V V V = V , I = - 250 A Gate Threshold Voltage - 1 - 2.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 250 nA GSS DS GS V = - 40 V, V = 0 V - 1 DS GS I V = - 40 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current - 50 A DSS DS GS J V = - 40 V, V = 0 V, T = 150 C - 250 DS GS J a I V - 10 V, V = - 10 V - 50 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 14 A 0.0135 0.0162 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 12 A 0.0190 0.0230 GS D a g V = - 20 V, I = - 14 A 40 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2765 iss Output Capacitance C V = 0 V, V = - 20 V, f = 1 MHz 330 pF oss GS DS C Reverse Transfer Capacitance 280 rss c Q 67 100 Total Gate Charge g c Q V = - 20 V, V = - 10 V, I = - 14 A Gate-Source Charge 13.5 nC gs DS GS D c Q 14 Gate-Drain Charge gd R Gate Resistance f = 1 MHz 0.5 2.5 5 g c t 10 20 Turn-On Delay Time d(on) c t Rise Time V = - 20 V, R = 2 11 20 r DD L ns c I - 10 A, V = - 10 V, R = 1 t D GEN g 42 63 Turn-Off Delay Time d(off) c t Fall Time 12 20 f b Drain-Source Body Diode Ratings and Characteristics T = 25 C C I Continuous Current - 36 S A I Pulsed Current - 100 SM a V I = - 10 A, V = 0 V Forward Voltage - 0.8 - 1.5 V SD F GS t Reverse Recovery Time 38 57 ns rr I I = - 10 A, dI/dt = 100 A/s Peak Reverse Recovery Current 2.3 3.5 A RM(REC) F Q Reverse Recovery Charge 40 60 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63372 2 S11-1657-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000