SUM60N02-3m9P Vishay Siliconix N-Channel 20-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) r () I (A) (BR)DSS DS(on) D 175 C Junction Temperature RoHS 0.0039 at V = 10 V GS 60 100 % R Tested COMPLIANT 20 g 0.0052 at V = 4.5 V GS 60 100 % UIS Tested APPLICATIONS OR-ing D T O-263 G DRAIN connected to T A B G D S T op V i e w S Ordering Information: SUM60N02-3m9P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 20 DS V V Gate-Source Voltage 20 GS a T = 25 C C 60 Continuous Drain Current (T = 175 C) I J D a T = 100 C C 60 A Pulsed Drain Current I 120 DM I Single Pulse Avalanche Current 50 AS L = 0.1 mH Single Pulse Avalanche Energy E 125 mJ AS c T = 25 C C 120 b P W Maximum Power Dissipation D d T = 25 C 3.75 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit d R Junction-to-Ambient (PCB Mount) 40 thJA C/W R Junction-to-Case 1.25 thJC Notes: a. Package limited. b. Duty cycle 1 %. c. See SOA curve for voltage derating. d. When mounted on 1 square PCB (FR-4 material). Document Number: 69820 www.vishay.com S-80183-Rev. A, 04-Feb-08 1SUM60N02-3m9P Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 (BR)DSS DS D V V V = V , I = 250 A Gate-Threshold Voltage 1.0 3 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I V = 20 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 20 V, V = 0 V, T = 175 C 250 DS GS J a I V 5 V, V = 10 V 100 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0031 0.0039 GS D V = 10 V, I = 20 A, T = 125 C 0.0059 GS D J a r Drain-Source On-State Resistance DS(on) V = 10 V, I = 20 A, T = 175 C 0.007 GS D J V = 4.5 V, I = 20 A 0.0042 0.0052 GS D a g V = 10 V, I = 20 A 95 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 5950 iss Output Capacitance C V = 0 V, V = 10 V, f = 1 MHz 985 pF oss GS DS C Reverse Transfer Capacitance 365 rss b Q 33 50 Total Gate Charge g b Q V = 10 V, V = 4.5 V, I = 50 A Gate-Source Charge 18 nC gs DS GS D b Q 7 Gate-Drain Charge gd R Gate Resistance 0.75 1.5 2.3 g b t 15 25 Turn-On Delay Time d(on) b t Rise Time V = 10 V, R = 0.2 711 r DD L ns b I 50 A, V = 10 V, R = 1.0 t D GEN g 35 55 Turn-Off Delay Time d(off) b t Fall Time 812 f c Source-Drain Diode Ratings and Characteristics T = 25 C C I Continuous Current 60 S A I Pulsed Current 100 SM a V I = 20 A, V = 0 V 0.85 1.5 V Forward Voltage SD F GS Reverse Recovery Time t 45 90 ns rr I I = 20 A, di/dt = 100 A/s Peak Reverse Recovery Current 1.7 3.4 A RM F Reverse Recovery Charge Q 0.039 0.155 C rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69820 2 S-80183-Rev. A, 04-Feb-08