SUM70101EL www.vishay.com Vishay Siliconix P-Channel 100 V (D-S) 175 C MOSFET FEATURES TO-263 TrenchFET power MOSFET Package with low thermal resistance Maximum 175 C junction temperature Low R minimizes power loss from conduction DS(on) Compatible with logic-level gate driving 100 % R and UIS tested g SS DD Material categorization: for definitions of compliance GG please see www.vishay.com/doc 99912 Top View APPLICATIONS S PRODUCT SUMMARY Battery protection V (V) -100 DS Motor drive control R max. ( ) at V = -10 V 0.0101 DS(on) GS G Load switch R max. ( ) at V = -4.5 V 0.0150 DS(on) GS Q typ. (nC) 125 g I (A) -120 P-Channel MOSFET D Configuration Single D ORDERING INFORMATION Package TO-263 Lead (Pb)-free and halogen-free SUM70101EL-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-source voltage V -100 DS V Gate-source voltage V 20 GS d T = 25 C -120 Continuous drain current C I D (T = 175 C) J T = 125 C -78 C A Pulsed drain current (100 s) I -240 DM Avalanche current I -75 AS L = 0.1 mH a Single pulse avalanche energy E 281 mJ AS c T = 25 C 375 C Power dissipation P W D b T = 125 C 125 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALUNIT b Junction-to-ambient PCB mount R 40 thJA C/W Junction-to-case R 0.4 thJC Notes a. Duty cycle 1 % b. When mounted on 1 square PCB (FR4 material) c. See SOA curve for voltage derating d. Limited by package S17-0257-Rev. A, 20-Feb-17 Document Number: 77605 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUM70101EL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -100 - - DS GS D V Gate threshold voltage V V = V , I = -250 A -1.5 - -2.5 GS(th) DS GS D Gate-body leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = -100 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I V = -100 V, V = 0 V, T = 125 C - - -50 A DSS DS GS J V = -100 V, V = 0 V, T = 175 C - - -250 DS GS J a On-state drain current I V -5 V, V = -10 V -120 - - A D(on) DS GS V = -10 V, I = -30 A - 0.0081 0.0101 GS D a Drain-source on-state resistance R DS(on) V = -4.5 V, I = -20 A - 0.0114 0.0150 GS D a Forward transconductance g V = -15 V, I = -25 A - 60 - S fs DS D b Dynamic Input capacitance C - 7000 - iss Output capacitance C V = 0 V, V = -50 V, f = 1 MHz - 2180 - pF oss GS DS Reverse transfer capacitance C - 170 - rss c Total gate charge Q - 125 190 g c Gate-source charge Q V = -50 V, V = -10 V, I = -110 A -29- nC gs DS GS D c Gate-drain charge Q -30- gd Gate resistance R f = 1 MHz 1.3 6.5 13 g c Turn-on delay time t -20 30 d(on) c Rise time t -40 60 r V = -50 V, R = 0.71 DD L ns c I -70 A, V = -10 V, R = 1 Turn-off delay time t D GEN g - 110 200 d(off) c Fall time t -40 60 f b Drain-Source Body Diode Characteristics (T = 25 C ) C Continuous current I - - -110 S A Pulsed current I - - -240 SM a Forward voltage V I = -85 A, V = 0 V - -1 -1.5 V SD F GS Reverse recovery time t - 110 170 ns rr Peak reverse recovery charge I I = -85 A, dI/dt = 100 A/s --7 -11 A RM(REC) F Reverse recovery charge Q - 0.38 0.57 C rr Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0257-Rev. A, 20-Feb-17 Document Number: 77605 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000