TSM1N80 Taiwan Semiconductor N-Channel Power MOSFET 800V, 0.3A, 21.6 FEATURES KEY PERFORMANCE PARAMETERS Advanced planar process PARAMETER VALUE UNIT 100% avalanche tested V 800 V DS Fast switching R (max) 21.6 DS(on) Q 5 nC g APPLICATION Power Supply Lighting SOT-223 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 800 V DS Gate-Source Voltage V 30 V GS Continuous Drain Current I 0.3 A D (Note 1) Pulsed Drain Current I 1 A DM (Note 2) Single Pulse Avalanche Energy E 90 mJ AS (Note 1) Avalanche Current, Repetitive or Not-Repetitive I 1 A AR Total Power Dissipation T = 25C P 2.1 W C DTOT Operating Junction Temperature T 150 C J Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Ambient Thermal Resistance R 60 C/W JA Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined JA at the solder mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board JA CA design. R shown below for single device operation on FR-4 PCB in still air JA Document Number: DS P0000037 1 Version: B15 Not Recommended TSM1N80 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 1mA BV 800 -- -- V GS D DSS Drain-Source On-State Resistance V = 10V, I = 0.15A R -- 18 21.6 GS D DS(ON) Gate Threshold Voltage V = V , I = 250A V 3 -- 5 V DS GS D GS(TH) Zero Gate Voltage Drain Current V = 800V, V = 0V I -- -- 25 A DS GS DSS Gate Body Leakage V = 30V, V = 0V I -- -- 10 A GS DS GSS Forward Transconductance V = 40V, I = 0.1A g -- 0.36 -- S DS D fs Diode Forward Voltage I = 0.2A, V = 0V V -- -- 1.4 V S GS SD (Note 3) Dynamic Total Gate Charge Q -- 5 6 g V = 640V, I = 0.3A, DS D Gate-Source Charge Q -- 1 -- gs nC V = 10V GS Gate-Drain Charge Q -- 2 -- gd Input Capacitance C -- 155 200 iss V = 25V, V = 0V, DS GS Output Capacitance C -- 20 26 pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 2.7 4 rss (Note 4) Switching Turn-On Delay Time t -- 10 30 d(on) Turn-On Rise Time t -- 50 20 r V = 10V, I = 0.3A, GS D ns Turn-Off Delay Time V = 400V, R = 25 t -- 16 45 DS G d(off) Turn-Off Fall Time t -- 25 60 f Note: 1. Pulse test: pulse width <=300uS, duty cycle <=2% 2. (V = 50V, I =0.8A, L=170mH, R =25) DD AS G 3. For design reference only, not subject to production testing. 4. Switching time is essentially independent of operating temperature. Document Number: DS P0000037 2 Version: B15 Not Recommended