TSM2302 20V N-Channel MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate Parameter Value Unit 2. Source 3. Drain V 20 V DS V = 4.5V 65 GS R (max) m DS(on) V = 2.5V 95 GS Q g 5.4 nC Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Package Packing TSM2302CX RF SOT-23 3kpcs / 7 Reel TSM2302CX RFG SOT-23 3kpcs / 7 Reel N-Channel MOSFET Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (T = 25C, unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage V 8 V GS Continuous Drain Current I 2.8 A D (Note 1) Pulsed Drain Current I 8 A DM (Note 2) Continuous Source Current (Diode Conduction) I 1.6 A S Ta = 25C 1.25 Maximum Power Dissipation P W D Ta = 75C 0.8 Operating Junction and Storage Temperature Range T , T -55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit Thermal Resistance Junction to Foot R 75 C/W JF Thermal Resistance Junction to Ambient R 145 C/W JA 1/6 Version: C15 TSM2302 20V N-Channel MOSFET Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit (Note 3) Static Drain-Source Breakdown Voltage V = 0V, I = 250uA BV 20 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250uA V 0.65 0.95 1.2 V DS GS D GS(TH) Gate Body Leakage V = 8V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 16V, V = 0V I -- -- 1.0 A DS GS DSS On-State Drain Current V = 5V, V = 4.5V I 6 -- -- A DS GS D(ON) V = 4.5V, I = 2.8A -- 40 65 GS D Drain-Source On-State Resistance R m DS(ON) V = 2.5V, I = 2.0A -- 50 95 GS D Forward Transconductance V = 5V, I = 2.8A g -- 10 -- S DS D fs Diode Forward Voltage I = 1.6A, V = 0V V -- 0.76 1.2 V S GS SD (Note 4) Dynamic Total Gate Charge Q -- 5.4 10 g V = 10V, I = 2.8A, DS D Gate-Source Charge Q -- 0.65 -- nC gs V = 4.5V GS Gate-Drain Charge Q -- 1.4 -- gd Input Capacitance C -- 340 -- iss V = 10V, V = 0V, DS GS pF Output Capacitance C -- 115 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 33 -- rss (Note 5) Switching Turn-On Delay Time t -- 12 25 d(on) VDD = 6V, RL = 10, Turn-On Rise Time t -- 36 60 r I = 1A, V = 4.5V, ns D GEN Turn-Off Delay Time t -- 34 60 d(off) RG = 6 Turn-Off Fall Time t -- 10 25 f Notes: 1. Pulse width limited by the maximum junction temperature 2. Surface Mounted on FR4 Board t d 5 sec. 3. Pulse test: PW d 300s, duty cycle d 2% 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature. 2/6 Version: C15