TSM2307CX 30V P-Channel MOSFET SOT-23 Pin De finition: Key Parameter Performance 1. Gate 2. Source Parameter Value Unit 3. Drain V -30 V DS V = -10V 95 GS R (max) m DS(on) V = -4.5V 140 GS Q 10 nC g Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Package Packing TSM2307CX RFG SOT-23 3kpcs / 7 Reel P-Channel MOSFET Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (T = 25 unless otherwise noted) C Parameter Symbol Limit Unit -30 Drain-Source Voltage V V DS 20 Gate-Source Voltage V V GS (Note 1) -3 Continuous Drain Current I A D (Note 2) -20 Pulsed Drain Current I A DM Continuous Source Current (Diode Conduction) I -1.7 A S 1.25 T = 25 a Power Dissipation P W D T = 75 0.8 a Operating Junction Temperature T +150 J -50 to +150 Storage Temperature Range T STG Document Number: DS P0000048 1 Version: D15 TSM2307CX 30V P-Channel MOSFET Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case R 75 /W JC Thermal Resistance - Junction to Ambient R 130 /W JA Electrical Specifications (T = 25 unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = -250A BV -30 -- -- V GS D DSS V = -10V, I = -3A -- 76 95 m GS D Drain-Source On-State Resistance R DS(ON) V = -4.5V, I = -2A GS D -- 103 140 m Gate Threshold Voltage V = V , I = -250A V DS GS D GS(TH) -1 -- -3 V Zero Gate Voltage Drain Current V = -30V, V = 0V I -- -- -1.0 A DS GS DSS Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS (Note 4) Forward Transconductance V = -10V, I = -6A g DS D fs -- 5 -- S Diode Forward Voltage I = -1.7V, V = 0V V S GS SD -1.2 V Dynamic (Note 3,4) Total Gate Charge Q -- 10 15 g V = -15V, I = -3A, (Note 3,4) DS D Gate-Source Charge Q gs -- 1.9 -- nC V = -10V GS (Note 3,4) Gate-Drain Charge Q -- 2 -- gd Input Capacitance C -- 565 -- iss V = -30V, V = 0V, DS GS Output Capacitance C -- 126 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C rss -- 75 -- Switching (Note 3,4)) Turn-On Delay Time t -- 10 20 d(on) (Note 3,4) V = -15V, R = 15, DD L Turn-On Rise Time t -- 9 20 r I = -1A, V = -10V, ns D GEN (Note 3,4) Turn-Off Delay Time t d(off) -- 27 50 R =6 G (Note 3,4) Turn-Off Fall Time t f -- 7 16 Note: 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. Pulse test: pulse width 300s, duty cycle 2% 4. Switching time is essentially independent of operating temperature. Document Number: DS P0000048 2 Version: D15