TSM230N06CP 60V N-Channel Power MOSFET TO-252 Key Parameter Performance Pin Definition: (DPAK) 1. Gate Parameter Value Unit 2. Drain 3. Source V 60 V DS V = 10V 23 GS R (max) m DS(on) V = 4.5V GS 28 Q 28 nC g Block Diagram Features 100% avalanche tested Fast Switching Ordering Information Ordering code Package Packing TSM230N06CP ROG TO-252 2.5kpcs / 13 Reel Note: Halogen-free according to IEC 61249-2-21 definition N-Channel MOSFET Absolute Maximum Ratings (Tc = 25C unless otherwise noted) Parameter Symbol Limit Unit 60 Drain-Source Voltage V V DS 20 Gate-Source Voltage V V GS 50* Tc = 25C A (Note 1) Continuous Drain Current I D 32* Tc = 100C A (Note 2) 200 Pulsed Drain Current I A DM (Note 3) Single Pulse Avalanche Energy E 42 mJ AS Power Dissipation T = 25C P 53 W C D Operating Junction Temperature T 150 C J -55 to +150 Storage Temperature Range T C STG Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case R 2 JC C/W Thermal Resistance - Junction to Ambient R 62 JA 1/6 Version: D1802 TSM230N06CP 60V N-Channel Power MOSFET Electrical Specifications (T = 25C unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 60 -- -- V GS D DSS V = 10V, I = 20A -- 20 23 GS D Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 12A -- 23 28 GS D Gate Threshold Voltage V = V , I = 250A V 1.2 1.8 2.5 V DS GS D GS(TH) V = 60V, V = 0V -- -- 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 48V, T = 125C -- -- 10 DS J Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS (Note 4) Forward Transconductance V = 10V, I = 10A g -- 9 -- S DS D fs Dynamic (Note 4,5) Total Gate Charge Q -- 28 -- g V = 30V, I = 15A, DS D (Note 4,5) Gate-Source Charge Q -- 3.5 -- nC gs V = 10V GS (Note 4,5) Gate-Drain Charge Q -- 6.5 -- gd Input Capacitance C -- 1680 -- iss V = 25V, V = 0V, DS GS Output Capacitance C -- 115 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 85 -- rss Switching (Note 4,5) Turn-On Delay Time t -- 7.2 -- d(on) (Note 4,5) Turn-On Rise Time t -- 38 -- V = 30V, I = 1A, DD D r ns (Note 4,5) Turn-Off Delay Time V = 10V, R = 6 t -- 34 -- GS G d(off) (Note 4,5) Turn-Off Fall Time t -- 8.2 -- f Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source I -- -- 50 A S Diode Forward Current Integral reverse diode Maximum Pulse Drain-Source Diode in the MOSFET I -- -- 200 A SM Forward Current Diode-Source Forward Voltage V = 0V, I = 1A V -- -- 1 V GS S SD (Note 4) Reverse Recovery Time V = 0V, I = 1A t -- 19.6 -- ns GS S rr (Note4) Reverse Recovery Charge dI /dt = 100A/s Q -- 14.2 -- nC F rr Note: 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. L = 0.1mH, I = 29A, V = 25V, R = 25, Starting T = 25C AS DD G J 4. Pulse test: pulse width 300s, duty cycle 2% 5. Switching time is essentially independent of operating temperature. 2/6 Version: D1802