7 TSM090N03E Taiwan Semiconductor 30V N-Channel Power MOSFET 30V, 50A, 9m FEATURES KEY PERFORMANCE PARAMETERS Fast switching PARAMETER VALUE UNIT Halogen Free V 30 V DS G-S ESD Protection Diode Embedded V = 10V 9 GS R (max) m DS(on) V = 4.5V 14 GS Q 7.5 nC g APPLICATION MB / VGA / Vcore POL Applications nd SMPS 2 SR TO-252 (DPAK) Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS 50 T = 25C C Continuous Drain Current I A D T = 100C 32 C (Note 1) Pulsed Drain Current I 200 A DM T = 25C 40 W C Total Power Dissipation P D Derate above T = 25C 0.32 W/C C (Note 2) Single Pulsed Avalanche Energy E 45 mJ AS (Note 2) Single Pulsed Avalanche Current I 30 A AS Operating Junction Temperature T 150 C J Storage Temperature Range T - 55 to +150 C STG Document Number: DS P0000212 1 Version: A15 7 TSM090N03E Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R C/W 3.1 JC Junction to Ambient Thermal Resistance R C/W 62 JA Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined JA at the solder mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board JA CA design. R shown below for single device operation on FR-4 PCB in still air. JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) J PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note3) Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 30 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1.2 1.6 2.5 V DS GS D GS(TH) Gate Body Leakage V = 20V, V = 0V I GS DS GSS -- -- 10 A V = 30V, V = 0V -- -- 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 24V, T = 125C -- -- 10 DS J Forward Transconductance g V = 10V, I = 8A -- 9.5 -- S fs DS D V = 10V, I = 16A -- 7.5 9 GS D Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 8A -- 9.6 14 GS D (Note4) Dynamic Total Gate Charge Q -- 7.7 -- g V = 15V, I = 20A, DS D Gate-Source Charge Q -- 1.9 -- nC gs V = 4.5V GS Gate-Drain Charge Q -- 2.8 -- gd Input Capacitance C -- 680 -- iss V = 25V, V = 0V, DS GS Output Capacitance C -- 150 -- pF oss f = 1MHz Reverse Transfer Capacitance C rss -- 70 -- V =0V,V =0V, GS DS Gate Resistance R -- 2.7 -- g f=1MHz (Note5) Switching Turn-On Delay Time t d(on) -- 4.8 -- Turn-On Rise Time t -- 12.5 -- r V =15V , V =10V , DD GS ns R =3.3, I =-15A Turn-Off Delay Time G D t -- 27.6 -- d(off) Turn-Off Fall Time t -- 8.2 -- f (Note3) Source-Drain Diode Forward Voltage V = 0V, I = 1A V -- -- 1 V GS S SD Continuous Drain-Source Diode 50 I -- -- A V =V =0V S G D Pulse Drain-Source Diode Force Current 200 I -- -- A SM Notes: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. V =25V, V =10V, L=0.1mH, I =30A, R =25, Starting T =25. DD GS AS G J 3. Pulse test: PW 300s, duty cycle 2% 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature Document Number: DS P0000212 2 Version: A15