TSM10ND65CI Taiwan Semiconductor N-Channel Power MOSFET 650V, 10A, 0.8 FEATURES KEY PERFORMANCE PARAMETERS 100% UIS and Rg tested PARAMETER VALUE UNIT Advanced planar process V 650 V DS Compliant to RoHS Directive 2011/65/EU and in R (max) 0.8 DS(on) accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 Q 39.6 nC g APPLICATIONS AC/DC LED Lighting Power Supply ITO-220 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL Limit UNIT Drain-Source Voltage V 650 V DS Gate-Source Voltage V 30 V GS T = 25C 10 C (Note 1) Continuous Drain Current I A D T = 100C 6.3 C (Note 2) Pulsed Drain Current I 40 A DM 56.8 Total Power Dissipation T = 25C P W C DTOT (Note 3) 435 mJ Single Pulse Avalanche Energy E AS (Note 3) 6.6 A Single Pulse Avalanche Current I AS - 55 to +150 C Operating Junction and Storage Temperature Range T , T J STG THERMAL PERFORMANCE PARAMETER SYMBOL Limit UNIT Junction to Case Thermal Resistance R 2.2 C/W JC Junction to Ambient Thermal Resistance R 62 C/W JA Thermal Performance Note: RJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. 1 Version: A1804 TSM10ND65CI Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 650 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 2.5 3 3.8 DS GS D GS(TH) V Gate Body Leakage V = 30V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 650V, V = 0V I -- -- 1 DS GS DSS A Drain-Source On-State Resistance -- 0.59 0.8 V = 10V, I = 2.5A R GS D DS(on) (Note 4) (Note 5) Dynamic Total Gate Charge Q -- 39.6 -- g V = 520V, I = 5A, DS D Gate-Source Charge Q -- 8.1 -- nC gs V = 10V GS 12.5 Gate-Drain Charge Q -- -- gd Input Capacitance C -- 1863 -- iss V = 50V, V = 0V, DS GS Output Capacitance C -- 108 -- oss pF f = 1.0MHz Reverse Transfer Capacitance C -- 9 -- rss Gate Resistance R -- 1.3 2.6 g (Note 6) Switching 11 Turn-On Delay Time t -- -- d(on) Turn-On Rise Time t -- 20 -- r V = 325V, R = 5, DD G ns Turn-Off Delay Time I = 5A, V = 10V t -- 36 -- D GS d(off) Turn-Off Fall Time t -- 23 -- f Source-Drain Diode Body-Diode Continuous Forward Current -- -- 10 A I S Body-Diode Pulsed Current -- -- 40 A I SM (Note 4) Forward Voltage -- -- 1.2 V I = 5A, V = 0V V S GS SD Reverse Recovery Time -- 253 -- ns t rr I = 5A S Reverse Recovery Charge -- 2.5 -- C dI /dt = 100A/s Q F rr Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature o 3. L = 20mH, I = 6.6A, V = 50V, R = 25, Starting T = 25 C AS DD G J 4. Pulse test: PW 300s, duty cycle 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM10ND65CI C0G ITO-220 50pcs / Tube 2 Version: A1804