TSM110NB04LCR Taiwan Semiconductor N-Channel Power MOSFET 40V, 54A, 11m FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER VALUE UNIT DS(ON) Logic level V 40 V DS Low gate charge for fast power switching V = 10V 11 GS 100% UIS and R tested. g R (max) m DS(on) V = 4.5V 16 GS 175C Operating Junction Temperature Compliant to RoHS directive 2011/65/EU and in Q 12 nC g accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 APPLICATIONS BLDC Motor Control Battery Power Management DC-DC converter Secondary Synchronous Rectification PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 40 V DS Gate-Source Voltage V 20 V GS T = 25C 54 C (Note 1) Continuous Drain Current I A D T = 25C 12 A Pulsed Drain Current I 216 A DM (Note 2) Single Pulse Avalanche Current I 16 A AS (Note 2) Single Pulse Avalanche Energy E 38 mJ AS T = 25C 68 C Total Power Dissipation P W D T = 125C 23 C T = 25C 3.1 A Total Power Dissipation P W D T = 125C 1 A Operating Junction and Storage Temperature Range T , T - 55 to +175 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 2.2 C/W JC Junction to Ambient Thermal Resistance R 48 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA 2 determined by the users board design. The RJA limit presented here is based on mounting on a 1 in pad of 2 oz copper. 1 Version: B1804 TSM110NB04LCR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 40 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1 1.9 2.5 GS DS D GS(TH) V Gate-Source Leakage Current V = 20V, V = 0V I -- -- 100 nA GS DS GSS V = 0V, V = 40V GS DS -- -- 1 Drain-Source Leakage Current I A V = 0V, V = 40V DSS GS DS -- -- 100 T = 125C J Drain-Source On-State Resistance V = 10V, I = 12A -- 8 11 GS D R m DS(on) (Note 3) V = 4.5V, I = 10A -- 12 16 GS D (Note 3) V = 10V, I = 12A Forward Transconductance DS D g -- 34 -- S fs (Note 4) Dynamic V = 10V, V = 20V, GS DS Total Gate Charge Q -- 23 -- g I = 12A D Total Gate Charge Q -- 12 -- g nC V = 4.5V, V = 20V, GS DS Gate-Source Charge Q -- 4 -- gs I = 10A D Gate-Drain Charge Q -- 6 -- gd Input Capacitance C -- 1269 -- iss V = 0V, V = 20V GS DS Output Capacitance C -- 142 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 82 -- rss Gate Resistance f = 1.0MHz R 0.5 1.7 3.4 g (Note 4) Switching Turn-On Delay Time t -- 1 -- d(on) Turn-On Rise Time t -- 20 -- V = 10V, V = 20V, r GS DS ns I = 12A, R = 2 Turn-Off Delay Time t -- 13 -- D G d(off) Turn-Off Fall Time t -- 13 -- f Source-Drain Diode (Note 3) Forward Voltage V -- -- 1.2 V V = 0V, I = 12A SD GS S Reverse Recovery Time t -- 15 -- ns rr I = 12A , S Reverse Recovery Charge Q -- 7 -- nC dI/dt = 100A/s rr Notes: 1. Silicon limited current only. 2. L = 0.3mH, V = 10V, V = 25V, R = 25, I = 16A, Starting T = 25C GS DD G AS J 3. Pulse test: Pulse Width 300s, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM110NB04LCR RLG PDFN56 2,500pcs / 13 Reel 2 Version: B1804