TSM160N10 Taiwan Semiconductor N-Channel Power MOSFET 100V, 160A, 5.5m FEATURES KEY PERFORMANCE PARAMETERS Advanced Trench Technology PARAMETER VALUE UNIT Low R 5.5m (Max.) DS(ON) V 100 V DS Low gate charge typical 154nC (Typ.) Low Crss typical 260pF (Typ.) R (max) 5.5 m DS(on) Q 154 nC g TO-220 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 100 V DS Gate-Source Voltage V 20 V GS T = 25C 160 C A T = 70C 127 C (Note 1) Continuous Drain Current I D T = 25C 14.2 A A T = 70C 11.4 A (Note 2) Pulsed Drain Current I 620 A DM T = 25C 300 C W T = 70C 210 C Total Power Dissipation P DTOT T = 25C 2.4 A W T = 70C 1.68 A (Note 3) Single Pulsed Avalanche Energy E E 400 mJ AS, AR (Note 3) Single Pulsed Avalanche Current I I 40 A AS, AR Operating Junction and Storage Temperature Range T , T - 55 to +175 C J STG Document Number: DS P0000029 1 Version: C15 Not Recommended TSM160N10 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 0.5 C/W JC Junction to Ambient Thermal Resistance R 62.5 C/W JA Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined JA at the solder mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board JA CA design. R shown below for single device operation on FR-4 PCB in still air. JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Static Drain-Source Breakdown Voltage V = 0V, I = 250uA BV 100 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 2 3 4 V DS GS D GS(TH) Zero Gate Voltage Drain Current V = 80V, V = 0V I -- -- 1 DS GS DSS uA Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS V = 10V, I = 30A -- 4.5 5.5 m Drain-Source On-State Resistance GS D R DS(on) (Note 5) Dynamic Total Gate Charge Q -- 154 -- g V = 30V, I = 30A, DS D Gate-Source Charge Q -- 35 -- nC gs V = 10V GS Gate-Drain Charge Q -- 40 -- gd Input Capacitance C -- 9840 -- iss V = 30V, V = 0V, DS GS Output Capacitance C -- 750 -- oss pF F = 1.0MHz Reverse Transfer Capacitance C -- 260 -- rss (Note 6) Switching Turn-On Delay Time t -- 25 -- d(on) Turn-On Rise Time t -- -- r 40 V = 10V, V = 30V, GS DS ns Turn-Off Delay Time R = 3.3 t -- 85 -- G d(off) Turn-Off Fall Time t -- 45 -- f (Note 4) Source-Drain Diode Forward Voltage V =0V, I =30A V - 0.8 1.3 V GS S SD o Reverse Recovery Time 120 nS I = 30A , T = 25 C t S J rr dI/dt = 100A/us Reverse Recovery Charge 160 nC Q rr Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. o 3. L = 0.5mH, I = 40A, V = 50V, R = 25, Starting T = 25 C AS DD G J 4. Pulse test: PW 300s, duty cycle 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. Document Number: DS P0000029 2 Version: C15 Not Recommended