TSM2N7002K 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate V (V) R (max) I (mA) DS DS(on) D 2. Source 3. Drain 2 V = 10V 300 GS 60 4 V = 4.5V 200 GS Features Block Diagram Low On-Resistance ESD Protected 2KV High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7002KCX RFG SOT-23 3kpcs / 7 Reel Note: G denotes for Halogen Free N-Channel MOSFET o Absolute Maximum Ratings (T =25 C unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS Continuous T =25C I 300 A D Drain Current mA Pulsed I 800 DM Continuous T =25C I 300 A DR Drain Reverse Current mA Pulsed I 800 DMR Maximum Power Dissipation P 300 mW D o Operating Junction Temperature T +150 C J o Operating Junction and Storage Temperature Range T , T -55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit S Lead Temperature (1/8 from case) T 5 L o Junction to Ambient Thermal Resistance (PCB mounted) R 350 C/W JA Notes: a. Pulse width 300s, Duty cycle 2% b. When the device is mounted on a glass epoxy board with area measuring 1 x 0.75 x 0.62 inch. c. The power dissipation of the package may result in a continuous drain current. 1/6 Version: E14 TSM2N7002K 60V N-Channel MOSFET o Electrical Specifications (T =25 C, unless otherwise noted) A Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V =0V, I =250A BV 60 -- -- V GS D DSS Gate Threshold Voltage V =V , I =250A V 1.0 1.5 2.5 DS GS D GS(TH) V Gate Body Leakage V =20V, V =0V I -- -- 10 GS DS GSS A Zero Gate Voltage Drain Current V =60V, V =0V I -- -- 1.0 DS GS DSS A V =10V, I =300mA -- 1.2 2 GS D Drain-Source On-State Resistance R DS(ON) V =4.5V, I =200mA -- 2 4 GS D Forward Transconductance V =10V, I =200mA g 100 -- -- DS D fs mS Diode Forward Voltage I =300mA, V =0V V -- 0.8 1.4 V S GS SD b Dynamic V =10V, I = 250mA, DS D Total Gate Charge Q -- 0.4 0.6 nC g V =4.5V GS Input Capacitance C -- 30 -- iss V = 25V, V = 0V, DS GS pF Output Capacitance C -- 6 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 2.5 -- rss c Switching Turn-On Delay Time t -- -- 25 d(on) V =30V, R =10 DD G ns I =200mA, V =10V, Turn-Off Delay Time t -- -- 35 D GEN d(off) Notes: a. pulse test: PW 300s, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/6 Version: E14