X-On Electronics has gained recognition as a prominent supplier of TSM3404CX RF MOSFETs across the USA, India, Europe, Australia, and various other global locations. TSM3404CX RF MOSFETs are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TSM3404CX RF Taiwan Semiconductor

TSM3404CX RF electronic component of Taiwan Semiconductor
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Part No.TSM3404CX RF
Manufacturer: Taiwan Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R
Datasheet: TSM3404CX RF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
334: USD 0.2835 ea
Line Total: USD 94.69 
Availability - 0
MOQ: 334  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 334
Multiples : 1
334 : USD 0.2835

   
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Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Operating Temperature Classification
Operating Temp Range
Gate-Source Voltage Max
Number Of Elements
Rad Hardened
Drain-Source On-Volt
Type
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We are delighted to provide the TSM3404CX RF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSM3404CX RF and other electronic components in the MOSFETs category and beyond.

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TSM3404 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate V (V) R (m) I (A) DS DS(on) D 2. Source 3. Drain 30 V = 10V 5.8 GS 30 43 V = 4.5V 5.0 GS Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Package Packing TSM3404CX RFG SOT-23 3Kpcs / 7 Reel N-Channel MOSFET Note: G denotes Halogen Free Product. o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 5.8 A D Pulsed Drain Current I 20 A DM a,b Continuous Source Current (Diode Conduction) I 2.5 A S o Ta = 25 C 0.75 Maximum Power Dissipation P W D o Ta = 75 C 0.48 Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T , T -55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit C/W Junction to Foot Thermal Resistance R 75 JF Junction to Ambient Thermal Resistance (PCB mounted) R 140 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 10 sec. Document Number: DS P0000073 1 Version: B15 TSM3404 30V N-Channel MOSFET o Electrical Specifications (Ta = 25 C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 30 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1 1.4 3 V DS GS D GS(TH) Gate Body Leakage V = 20V, V = 0V I -- -- 100 A GS DS GSS Zero Gate Voltage Drain Current V = 24V, V = 0V I -- -- 1.0 A DS GS DSS On-State Drain Current V = 5V, V = 4.5V I 20 -- -- A DS GS D(ON) V = 10V, I = 5.8A -- 23 30 GS D Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 5A -- 35 43 GS D Forward Transconductance V = 5V, I = 5A g -- 25 -- S DS D fs Diode Forward Voltage I = 1.0A, V = 0V V -- 0.76 1 V S GS SD b Dynamic Total Gate Charge Q -- 4.52 -- g V = 15V, I = 5.8A, DS D Gate-Source Charge Q -- 1.24 -- nC gs V = 10V GS Gate-Drain Charge Q -- 1.68 -- gd Input Capacitance C -- 400.96 -- iss V = 15V, V = 0V, DS GS Output Capacitance C -- 100.47 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 71.82 -- rss c Switching Turn-On Delay Time t -- 7.42 -- d(on) V = 15V, R = 2.2, DD L Turn-On Rise Time t -- 3.41 -- r I = 1A, V = 10V, nS D GEN Turn-Off Delay Time t -- 20.4 -- d(off) R = 6 G Turn-Off Fall Time t -- 3.01 -- f Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. Document Number: DS P0000073 2 Version: B15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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