TSM340N06 60V N-Channel Power MOSFET TO-220 ITO-220 Key Parameter Performance Pin Definition: 1. Gate Parameter Value Unit 2. Drain 3. Source V 60 V DS V = 10V 34 GS R (max) m DS(on) V = 4.5V GS 40 Q 16.6 nC g TO-251S TO-252 (IPAK) (DPAK) Block Diagram Ordering Information Part No. Package Packing TSM340N06CI C0G ITO-220 50pcs / Tube TSM340N06CZ C0G TO-220 50pcs / Tube TSM340N06CH X0G TO-251S 75pcs / Tube TSM340N06CP ROG TO-252 2.5kpcs / 13 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET Absolute Maximum Ratings (Tc = 25C unless otherwise noted) Limit Parameter Symbol Unit IPAK/DPAK ITO-220 TO-220 Drain-Source Voltage V 60 V DS 20 Gate-Source Voltage V V GS Tc = 25C 30 A (Note 1) Continuous Drain Current I D Tc = 100C 19 A (Note 2) Pulsed Drain Current I 120 A DM (Note 3) Single Pulse Avalanche Energy E 24 mJ AS (Note 2) Single Pulse Avalanche Current I 22 A AS Total Power Dissipation T = 25C P 40 27 66 W C D Operating Junction Temperature T 150 C J -55 to +150 Storage Temperature Range T C STG 1/9 Version: D14 TSM340N06CI C0G TSM340N06CZ C0G Not Recommended TSM340N06 60V N-Channel Power MOSFET Thermal Performance Limit Parameter Symbol Unit IPAK/DPAK ITO-220 TO-220 Thermal Resistance - Junction to Case R 3.1 4.7 1.9 C/W JC Thermal Resistance - Junction to Ambient R 62 C/W JA Electrical Specifications (T = 25 unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 60 -- -- V GS D DSS V = 10V, I = 15A -- 28 34 GS D Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 10A -- 33 40 GS D Gate Threshold Voltage V = V , I = 250A V 1.2 1.7 2.5 V DS GS D GS(TH) V = 60V, V = 0V -- -- 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 48V, T = 125C -- -- 10 DS J Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS Forward Transconductance V = 10V, I = 8A g -- 8 -- S DS D fs Dynamic (Note 4,5) Total Gate Charge Q -- 16.6 -- g V = 30V, I = 20A, DS D (Note 4,5) Gate-Source Charge Q -- 2.2 -- nC gs V = 10V GS (Note 4,5) Gate-Drain Charge Q -- 3.9 -- gd Input Capacitance C -- 1180 -- iss V = 30V, V = 0V, DS GS Output Capacitance C -- 68 -- pF oss f = 1MHz Reverse Transfer Capacitance C -- 45 -- rss Gate Resistance V =0V, V =0V, f=1MHz R -- 2.1 -- GS DS g Switching (Note 4,5) Turn-On Delay Time t -- 4.6 -- d(on) (Note 4,5) Turn-On Rise Time t -- 14.8 -- V =30V , V =10V , r DD GS ns (Note 4,5) R =6W, I =-1A G D Turn-Off Delay Time t -- 27.2 -- d(off) (Note 4,5) Turn-Off Fall Time t -- 7.8 -- f Source-Drain Diode Ratings and Characteristic Continuous Drain-Source Diode I -- -- 25 A S V =V =0V , Force Current G D Pulse Drain-Source Diode I -- -- 100 A SM Diode-Source Forward Voltage V = 0V, I = 1A V -- -- 1 V GS S SD (Note 4) Reverse Recovery Time V = 0V, I = 1A t -- 17 -- ns GS S rr (Note 4) dI /dt = 100A/s Reverse Recovery Charge F Q -- 12 -- nC rr Note: 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. L = 0.1mH, I = 22A, V = 50V, R = 25, Starting T = 25C AS DD G J 4. Pulse test: pulse width d 300s, duty cycle d 2% 5. Switching time is essentially independent of operating temperature. 2/9 Version: D14 TSM340N06CI C0G TSM340N06CZ C0G Not Recommended