IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 7.1 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB80N06S4-07 PG-TO263-3-2 4N0607 IPI80N06S4-07 PG-TO262-3-1 4N0607 IPP80N06S4-07 PG-TO220-3-1 4N0607 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25C, V =10V 80 A D C GS 2) 58 T =100C, V =10V C GS 2) I T =25C 320 Pulsed drain current D,pulse C 2) E I =40A 71 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 80 A AS Gate source voltage V - 20 V GS Power dissipation P T =25C 79 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - 55/175/56 Rev. 1.0 page 1 2009-03-24 IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 1.9 K/W thJC Thermal resistance, junction - R ---62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 60 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =40A 2.0 3.0 4.0 GS(th) DS GS D Zero gate voltage drain current I V =60V, V =0V - 0.01 1 A DSS DS GS V =60V, V =0V, DS GS - 5 100 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =80A - 6.2 7.4 m DS(on) GS D V =10V, I =80A, GS D - 5.9 7.1 SMD version Rev. 1.0 page 2 2009-03-24